发明授权
- 专利标题: Semiconductor light emitting system
- 专利标题(中): 半导体发光系统
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申请号: US483853申请日: 1990-02-23
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公开(公告)号: US5084895A公开(公告)日: 1992-01-28
- 发明人: Junichi Shimada , Renshi Sawada
- 申请人: Junichi Shimada , Renshi Sawada
- 申请人地址: JPX Tokyo
- 专利权人: Nippon Telegraph Telephone Corporation
- 当前专利权人: Nippon Telegraph Telephone Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX1-44382 19890224
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; G02B6/42 ; H01S3/00 ; H01S5/026 ; H01S5/40
摘要:
A semiconductor light emitting element, a laser or a light emitting diode which is deposited on a first area of a semiconductor substrate, which also carries a microlens for focusing or diverging an output beam of the light emitting element on a second area of the substrate. Both the light emitting element and the microlens are deposited on a substrate through a photolithoetching process, and an alignment of an optical axis of the light emitting element and an optical axis of the microlens is accomplished in the steps of producing a light emitting semiconductor system. Thus, a semiconductor light emitting system which functions not only to generate light but also to focus or diverge the light, and is small in size and light in weight, can be obtained.
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