公开(公告)号：US07483446B2

公开(公告)日：2009-01-27

申请号：US10807699

申请日：2004-03-23

申请人： Satoru Okamoto ,  Ken-ichi Sato

发明人： Satoru Okamoto ,  Ken-ichi Sato

IPC分类号： H04J3/16

CPC分类号： H04J14/0227 ,  H04J3/1617 ,  H04J14/0241 ,  H04J14/0278 ,  H04J14/0284 ,  H04J2203/0083 ,  H04Q11/0066 ,  H04Q11/0071

摘要： The present invention discloses a packet transmission device and a packet transmission system which can realize high-capacity communication. The transmission device transmits packets over a wavelength division multiplexing (WDM) link by mapping the packets into an optical path signal directly without any other medium such as an SDH path. The present invention also discloses a packet transmission device and a packet transmission system which can realize high-capacity communication over an SDH transmission link by mapping the packets directly into an SDH section payload without adding any VC path overhead in order to use the entire SDH section payload area.

摘要翻译： 本发明公开了一种可实现高容量通信的分组传输装置和分组传输系统。 传输设备通过波分复用（WDM）链路发送分组，通过直接将分组映射到光路信号中而不需要任何其它介质，例如SDH路径。 本发明还公开了一种分组传输装置和分组传输系统，其可以通过将分组直接映射到SDH部分有效载荷中而不增加任何VC路径开销来实现SDH传输链路的大容量通信，以便使用整个SDH部分 有效载荷区域。

公开(公告)号：US07433312B2

公开(公告)日：2008-10-07

申请号：US10544681

申请日：2004-12-21

申请人： Osamu Yoshihara ,  Noriyuki Oota ,  Noriki Miki

发明人： Osamu Yoshihara ,  Noriyuki Oota ,  Noriki Miki

IPC分类号： G01R31/08 ,  H04J3/16

CPC分类号： H04Q11/0067 ,  H04L41/0896 ,  H04L47/10 ,  H04L47/22 ,  H04Q2011/0064

摘要： In a P2MP system in which upstream bandwidth is shared by a plurality of ONUs, a dynamic bandwidth allocation circuit is provided which reduces the consumption of memory capacity, and avoids the divergence of parameters. A dynamic bandwidth allocation circuit provided in an optical line terminal (OLT) calculates, for each cycle and for each ONU, a target data size (targetj,k) which constitutes a target for allocated data size (allocatedj,k). Furthermore, taking the time constant of an exponential weighted moving average as τ, and taking α=(τ−1)/(τ+1), an ideal allocated data size (idealj,k) is calculated by idealj,k=targetj,k−(α/(1−α))·excessj,k−1. Furthermore, an excess allocated data size (excessj,k) per one cycle is calculated by excessj,k=α·excessj,k−1+(1−α)·(allocatedj,k−targetj,k). If idealj,k

摘要翻译： 在多个ONU共享上行带宽的P2MP系统中，提供了一种动态带宽分配电路，其减少了存储器容量的消耗，并且避免了参数的发散。 设置在光线路终端（OLT）中的动态带宽分配电路针对每个周期和每个ONU计算构成分配的数据大小的目标的目标数据大小（目标 j，k> 分配的j，k）。 此外，以指数加权移动平均值的时间常数作为τ，并且以α=（tau-1）/（tau + 1）），理想分配的数据大小（理想的j，k）为 通过理想的j，k，k，k，k，α（α/（1-α））过剩计算j，k-1。 此外，每一个周期的过量分配的数据大小（过量的j，k，k）通过过量的j，k，k， / SUB> +（1-α）（分配的j，k，target，j，k）。 如果理想的是，不使用带宽分配的条件用于带宽分配。

公开(公告)号：US07341381B2

公开(公告)日：2008-03-11

申请号：US11553709

申请日：2006-10-27

申请人： Naoko Shimoji ,  Masato Shiino ,  Masanobu Toyonaga ,  Kuniaki Terakawa ,  Hiroyuki Tanase ,  Tatsuya Nakajima ,  Masashi Awamori ,  Kazuhiro Takizawa ,  Daigo Saitoh ,  Kenichiro Ohtsuka ,  Daizo Nishioka ,  Masahiro Hamada

发明人： Naoko Shimoji ,  Masato Shiino ,  Masanobu Toyonaga ,  Kuniaki Terakawa ,  Hiroyuki Tanase ,  Tatsuya Nakajima ,  Masashi Awamori ,  Kazuhiro Takizawa ,  Daigo Saitoh ,  Kenichiro Ohtsuka ,  Daizo Nishioka ,  Masahiro Hamada

IPC分类号： G02B6/36

CPC分类号： G02B6/3893 ,  G02B6/3821 ,  G02B6/3825 ,  G02B6/3865

摘要： A cantilever type latch having the fixed end on the side of exposing the terminal end surface of the optical fiber is provided on the side of the plug housing. Near the center of the upper surface of the latch, an engaging projection which is to be engaged in the engaging hole formed in the adapter or the receptacle is formed. The engaging projection has the slope which decreases the height toward the fixed end side of the latch, in which the gradient of the slope is nearly equal to or greater than the rotation angle required for the elastic deformation of the latch with the fixed end functioned as the fulcrum. Thereby easy disconnecting of the latch is implemented.

摘要翻译： 在插头壳体的一侧设置有在光纤的终端表面露出的侧面上具有固定端的悬臂式闩锁。 在闩锁的上表面的中心附近，形成了与形成在适配器或插座中的接合孔接合的接合突起。 接合突起具有朝向闩锁的固定端侧降低高度的斜率，其中斜率的梯度几乎等于或大于具有固定端的闩锁的弹性变形所需的旋转角度，其作用为 的支点。 从而实现了闩锁的简单断开。

公开(公告)号：US07088501B2

公开(公告)日：2006-08-08

申请号：US10265065

申请日：2002-10-03

申请人： Yasuo Shibata ,  Nobuhiro Kikuchi ,  Hiromi Oohashi ,  Yuichi Thomori

发明人： Yasuo Shibata ,  Nobuhiro Kikuchi ,  Hiromi Oohashi ,  Yuichi Thomori

IPC分类号： H01S3/00

CPC分类号： H01S5/50 ,  G02F2001/212 ,  G02F2001/217 ,  G02F2203/70 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/1032 ,  H01S5/4031 ,  H01S5/5063 ,  H01S5/5072

摘要： An optical amplifier includes a first optical path, second optical path, semiconductor optical amplifier, and multi-mode interference 3-dB coupler. The first optical path guides oscillation light. The second optical path guides signal light. The semiconductor optical amplifier causes oscillation on the first optical path. The multi-mode interference 3-dB coupler crosses the first and optical paths in the gain medium of the semiconductor optical amplifier.

公开(公告)号：US06990131B2

公开(公告)日：2006-01-24

申请号：US10222434

申请日：2002-08-16

申请人： Ryuzo Iga ,  Susumu Kondo ,  Matsuyuki Ogasawara ,  Yasuhiro Kondo

发明人： Ryuzo Iga ,  Susumu Kondo ,  Matsuyuki Ogasawara ,  Yasuhiro Kondo

IPC分类号： H01S5/00

CPC分类号： H01S5/0265 ,  H01S5/2059 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/227 ,  H01S5/3072

摘要： A semiconductor optical device includes a multilayer structure and buried layers. The multilayer structure is constituted by a cladding layer having an n-type conductivity, an active region formed from an active layer or photoabsorption layer, and a cladding layer having a p-type conductivity which are successively formed on a semiconductor substrate having the first crystallographic orientation. The buried layers are made of a ruthenium-doped semi-insulating semiconductor crystal and formed on two sides of the mesa-stripe-like multilayer structure. The electrically activated ruthenium concentration in the ruthenium-doped semi-insulating semiconductor crystal grown on the growth surface having the second crystallographic orientation which is formed in the process of growing the semi-insulating semiconductor crystal is substantially equal to or higher than the electrically activated ruthenium concentration in the ruthenium-doped semi-insulating semiconductor crystal grown on the growth surface having the first crystallographic orientation wherein the second crystallographic orientation is different from the first crystallographic orientation. An integrated light source and a method of manufacturing a semiconductor optical device are also disclosed.

公开(公告)号：US06920166B2

公开(公告)日：2005-07-19

申请号：US10390358

申请日：2003-03-17

申请人： Tetsuya Akasaka ,  Seigo Ando ,  Toshio Nishida ,  Naoki Kobayashi ,  Tadashi Saitoh

发明人： Tetsuya Akasaka ,  Seigo Ando ,  Toshio Nishida ,  Naoki Kobayashi ,  Tadashi Saitoh

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01S5/20 ,  H01S5/323 ,  H01S5/343 ,  H01S5/00

CPC分类号： H01S5/32341 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/16 ,  H01S5/2077

摘要： A masking material 13, which includes stripe-like openings 12 parallel to the [1-100] direction of a nitride semiconductor thin film, is formed on a substrate. Nitride semiconductor thin films 11 doped with Mg are grown on the openings 12 by selective-area growth. The nitride semiconductor thin films 11 are composed of a portion 14 formed as a result of the growth in the direction perpendicular to a (0001) principal plane, and a portion 15 formed as a result of the growth of {11-2x} facets (x=0, 1, 2). The Mg concentration of the portion 15 is made lower than that of the portion 14.

摘要翻译： 在衬底上形成包括平行于氮化物半导体薄膜的[1-100]方向的条状开口12的掩模材料13。 通过选择性区域生长，在开口12上生长掺杂有Mg的氮化物半导体薄膜11。 氮化物半导体薄膜11由垂直于（0001）主平面的方向生长而形成的部分14和由{11-2×}面成长的结果形成的部分15 x = 0,1,2）。 使部分15的Mg浓度低于部分14的Mg浓度。

公开(公告)号：US6127200A

公开(公告)日：2000-10-03

申请号：US162235

申请日：1998-09-28

申请人： Yoshitaka Ohiso ,  Yoshio Itoh ,  Chikara Amano ,  Yoshitaka Kohama ,  Kouta Tateno ,  Hirokazu Takenouchi ,  Takashi Kurokawa

发明人： Yoshitaka Ohiso ,  Yoshio Itoh ,  Chikara Amano ,  Yoshitaka Kohama ,  Kouta Tateno ,  Hirokazu Takenouchi ,  Takashi Kurokawa

IPC分类号： H01S5/183 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/343 ,  H01L3/025

CPC分类号： B82Y20/00 ,  H01S5/18308 ,  H01S5/1838 ,  H01S2301/176 ,  H01S5/18305 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/2063 ,  H01S5/2224 ,  H01S5/34306 ,  H01S5/3434

摘要： A vertical-cavity surface-emitting semiconductor laser has first and second semiconductor multi-layered films, an active layer, and third and fourth semiconductor multi-layered films which are piled up on a GaAs substrate in that order. Furthermore, the first film is formed by piling up Al.sub.x-1 Ga.sub.1-x1 As layers (0.ltoreq.x1.ltoreq.1) and Al.sub.x2 Ga.sub.1-x2 As layers (0.ltoreq.x2.ltoreq.1) one after the other by turns. The second film is formed by piling up In.sub.x3 Ga.sub.1-x3 As.sub.y3 P.sub.1-y3 layers (0.ltoreq.x3, y3.ltoreq.1) and In.sub.x4 Ga.sub.1-x4 As.sub.y4 P.sub.1-y4 layers (0.ltoreq.x4, y4.ltoreq.1) one after the other by turns. The active layer is provided as an In.sub.x5 Ga.sub.1-x5 As.sub.y5 P.sub.1-y5 layer (0.ltoreq.x5, y5.ltoreq.1). The third film is formed by piling up In.sub.x6 Ga.sub.1-x6 As.sub.y6 P.sub.1-y6 layers (0.ltoreq.x6, y6.ltoreq.1) and In.sub.x7 Ga.sub.1-x7 As.sub.y7 P.sub.1-y7 layers (0.ltoreq.x7, y7.ltoreq.1) one after the other by turns. The fourth film is formed by piling up Al.sub.x8 Ga.sub.1-x8 As layers (0.ltoreq.x8.ltoreq.1) and Al.sub.x9 Ga.sub.1-x9 As layers (0.ltoreq.x9.ltoreq.1) one after the other by turns. In each film, each layer has a thickness corresponding to a value obtained by dividing an emission wavelength by a refractive index and 4.

摘要翻译： 垂直腔表面发射半导体激光器具有依次堆积在GaAs衬底上的第一和第二半导体多层膜，有源层和第三和第四半导体多层膜。 此外，第一膜通过一个接一个地叠加Alx-1Ga1-x1As层（0

公开(公告)号：US5972780A

公开(公告)日：1999-10-26

申请号：US911845

申请日：1997-08-15

申请人： Katsuyuki Machida ,  Hakaru Kyuragi ,  Hideo Akiya ,  Kazuo Imai

发明人： Katsuyuki Machida ,  Hakaru Kyuragi ,  Hideo Akiya ,  Kazuo Imai

IPC分类号： B29C43/56 ,  B32B37/18 ,  H05K3/20 ,  H01L21/30 ,  H01L21/46

CPC分类号： B29C43/56 ,  B32B37/00 ,  H05K3/20 ,  B29C2043/561 ,  B29C43/32 ,  B32B2309/68 ,  B32B37/025 ,  B32B37/18 ,  Y10T156/12 ,  Y10T156/1343 ,  Y10T156/1705

摘要： A thin film forming apparatus includes a specimen holder on which a substrate for thin film formation is placed, a transfer plate opposing the specimen holder, on which a sheet film having a thin film formed on a surface is placed, a thin film forming chamber comprising the specimen holder and the transfer plate, a pressure unit for moving at least one of the specimen holder and the transfer plate and pressing the specimen holder against the transfer plate for a predetermined time while the substrate and the thin film formed on the sheet film are in contact with each other, a heating unit for heating the substrate at a predetermined temperature, and an exhausting unit for vacuum-exhausting the thin film forming chamber.

摘要翻译： 一种薄膜形成装置，包括：试样保持体，配置有用于形成薄膜的基板;与该试样支架相对的转印板，在其上放置表面形成有薄膜的薄膜，薄膜形成室， 样品架和转印板，用于移动样本保持架和转印板中的至少一个的压力单元，并且在基板和形成在薄膜上的薄膜的同时将样本架抵靠转印板按压预定时间 彼此接触，用于在预定温度下加热基板的加热单元和用于真空排出薄膜形成室的排气单元。

公开(公告)号：US5887095A

公开(公告)日：1999-03-23

申请号：US48778

申请日：1998-03-26

申请人： Ryo Nagase ,  Shin-ichi Iwano

发明人： Ryo Nagase ,  Shin-ichi Iwano

IPC分类号： G02B6/36 ,  G02B6/38 ,  G02B6/00

CPC分类号： G02B6/3893 ,  G02B6/3825 ,  G02B6/3877 ,  G02B6/3897

摘要： An optical receptacle includes a housing having a base end and a nose end. From the base end of the housing is fitted the first ferrule. A split sleeve is provided in the housing. In the split sleeve is fitted the second ferrule of an optical fiber connector plug to be connected to the nose base side of the housing so that the first and second ferrules are aligned with each other. At the base end of the housing are provided first hook portions for holding the first ferrule while at the nose end are provided a fitting portion for fitting an optical fiber connector and second hook portions for holding the optical fiber connector plug in the fitting position thereof. The housing includes an inner part and an outer part having fixed therein the inner part. The inner part is composed of the first and second hook portions integrally molded. The outer part holds the optical fiber connector plug and hold therein the inner part fixedly. The optical receptacle has a simplified structure without adverse affect on the function of the device, thus achieving down-sizing and reduction in weight.

摘要翻译： 光学插座包括具有基端和鼻端的外壳。 从外壳的基端安装第一个套圈。 在壳体中设有开口套筒。 在开口套筒中安装光纤连接器插头的第二套圈，以连接到壳体的鼻基侧，使得第一和第二套圈彼此对准。 在壳体的基端设置有用于保持第一套圈的第一钩部，而在前端设置有用于装配光纤连接器的装配部分和用于将光纤连接器插头保持在其装配位置的第二钩部。 壳体包括内部部分和外部部分，其中固定有内部部分。 内部由整体模制的第一和第二钩部构成。 外部保持光纤连接器固定在其内部的内部。 光学插座具有简化的结构，而不会对装置的功能产生不利影响，从而实现减小尺寸和减轻重量。

公开(公告)号：US5781678A

公开(公告)日：1998-07-14

申请号：US591370

申请日：1996-01-25

申请人： Hiroaki Sano ,  Hiroki Ishikawa ,  Tsuyoshi Imaizumi ,  Kazuo Hogari ,  Osamu Kawata

发明人： Hiroaki Sano ,  Hiroki Ishikawa ,  Tsuyoshi Imaizumi ,  Kazuo Hogari ,  Osamu Kawata

IPC分类号： G02B6/46 ,  G02B6/38 ,  G02B6/44 ,  H02G1/06 ,  H02G1/08 ,  G02B6/26 ,  G02B6/42

CPC分类号： G02B6/4464 ,  G02B6/3878 ,  G02B6/4459 ,  G02B6/4472

摘要： An optical fiber path joint member according to the present invention includes a main path having an inlet and an outlet at respective ends thereof; and at least one joint path joining to the main path in one direction at an angle of equal to or less than 45.degree.. A method of blowing an optical fiber is comprised of the step of blowing an optical fiber into a pipe through the optical fiber path joint member according to the present invention.

摘要翻译： 根据本发明的光纤通道接头构件包括在其两端具有入口和出口的主路径; 以及以等于或小于45度的角度在一个方向上连接到主路径的至少一个接合路径。 吹制光纤的方法包括通过根据本发明的光纤路径接合部件将光纤吹入管道的步骤。