发明授权
US5093272A Manufacturing method for a self-aligned emitter-base-complex for
heterobipolar transistors
失效
用于双极晶体管的自对准发射极复合物的制造方法
- 专利标题： Manufacturing method for a self-aligned emitter-base-complex for heterobipolar transistors
- 专利标题（中）： 用于双极晶体管的自对准发射极复合物的制造方法
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申请号： US620625申请日： 1990-12-03
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公开(公告)号： US5093272A公开(公告)日： 1992-03-03
- 发明人: Joachim Hoepfner , Helmut Tews , Hans-Peter Zwicknagl
- 申请人： Joachim Hoepfner , Helmut Tews , Hans-Peter Zwicknagl
- 申请人地址： DEX Munich
- 专利权人： Siemens Aktiengesellschaft
- 当前专利权人： Siemens Aktiengesellschaft
- 当前专利权人地址： DEX Munich
- 优先权： EPX90100320 19900108
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/28 ; H01L21/331 ; H01L29/205 ; H01L29/737
摘要：
Method for manufacturing a self-aligned emitter-base complex whereby a sequence of epitaxial layers, which corresponds to the optimal base-emitter layer sequence in the re-etched part of the heterobipolar transistor is grown. Subsequently, the base implantation is introduced using a dummy-emitter as a mask. Using a dielectric mask covering the region not covered by the dummy-emitter, after the removal of the dummy-emitter the emitter contact layers are selectively grown in its region. The contacting is then provided.
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