发明授权
- 专利标题： Tunnel diode detector for microwave frequency applications
- 专利标题（中）： 隧道二极管检测器用于微波频率应用
-
申请号： US612152申请日： 1990-11-09
-
公开(公告)号： US5093692A公开(公告)日： 1992-03-03
- 发明人: Chung-Yi Su , Sanehiko Kakihana , Domingo A. Figueredo
- 申请人： Chung-Yi Su , Sanehiko Kakihana , Domingo A. Figueredo
- 申请人地址： CA Fremont
- 专利权人： Menlo Industries, Inc.
- 当前专利权人： Menlo Industries, Inc.
- 当前专利权人地址： CA Fremont
- 主分类号： H01L29/88
- IPC分类号： H01L29/88
摘要：
A tunnel diode is disclosed having a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on a semi-insulating substrate of indium phosphide. In an alternative embodiment, a tunnel diode is disclosed which has a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on an N-doped substrate.
公开/授权文献
- US5733669A Resistive component comprising a CRSI resistive film 公开/授权日：1998-03-31
信息查询
IPC分类:
