公开(公告)号：US20240297259A1

公开(公告)日：2024-09-05

申请号：US18573251

申请日：2022-06-01

申请人： Martin-Luther-Universität Halle-Wittenberg

发明人： Ersoy Sasioglu ,  Ingrid Mertig

IPC分类号： H01L29/88 ,  H01L29/20 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/88 ,  H01L29/66969 ,  H01L29/2003 ,  H01L29/24

摘要： The present disclosure concerns a negative differential resistance tunnel diode (100, 200) comprising two terminals (112, 114, 212, 214) for connecting to an electrical circuit as well as a tunnel junction (160, 260) having a first material layer (106, 206) of a cold metal, an insulating material layer of a tunnel barrier (108, 208), and a second material layer (110, 210) of a cold metal. A high peak current IP to valley current IV ratio can thereby be achieved.

公开(公告)号：US12002804B2

公开(公告)日：2024-06-04

申请号：US17064674

申请日：2020-10-07

申请人： Infineon Technologies Austria AG

发明人： Armin Willmeroth ,  Franz Hirler ,  Peter Irsigler

IPC分类号： H01L29/06 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/082 ,  H01L29/10 ,  H01L29/732 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/792 ,  H01L29/88 ,  H01L29/08 ,  H01L29/861 ,  H10B12/00

CPC分类号： H01L27/0629 ,  H01L21/823487 ,  H01L27/0828 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/10 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/732 ,  H01L29/7395 ,  H01L29/7788 ,  H01L29/78 ,  H01L29/7823 ,  H01L29/7926 ,  H01L29/88 ,  H01L27/0826 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7838 ,  H01L29/8611 ,  H10B12/0383 ,  H10B12/395

摘要： A semiconductor device includes a semiconductor body, a vertical transistor arranged in a first device region of the semiconductor body, and a lateral transistor arranged in a second device region of the semiconductor body. The vertical transistor includes a plurality of drift regions of a first doping type and a plurality of compensation regions of a second doping type complementary to the first doping type. The drift regions and the compensation regions are arranged alternately in a lateral direction of the semiconductor body. The second device region includes a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type. The lateral transistor includes device regions arranged in the first semiconductor region.

公开(公告)号：US11908889B2

公开(公告)日：2024-02-20

申请号：US17428137

申请日：2019-12-05

申请人： SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.

发明人： Yi Gong ,  Wei Liu ,  Yuanlin Yuan ,  Lei Liu ,  Rui Wang

IPC分类号： H01L29/06 ,  H01L27/06 ,  H01L29/88 ,  H01L29/78 ,  H01L29/788

CPC分类号： H01L29/0634 ,  H01L27/0629 ,  H01L29/788

摘要： Provided is a semiconductor super junction power device. The semiconductor super junction power device includes an MOSFET cell array composed of multiple super junction MOSFET cells. Each of multiple MOSFET cells includes a p-type body region located at the top of an n-type drift region, a p-type columnar doping region located below the p-type body region, an n-type source region located in the p-type body region, a gate dielectric layer located above the p-type body region, a gate electrode located above the p-type body region, an n-type floating gate located above the p-type body region and an opening located in the gate dielectric layer, where in a lateral direction, the gate electrode is located on one side close to the n-type source region; an opening located in the gate dielectric layer, where the n-type floating gate contacts the p-type body region through the opening to form a p-n junction diode.

公开(公告)号：US20230290892A1

公开(公告)日：2023-09-14

申请号：US17788967

申请日：2021-03-05

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng

IPC分类号： H01L29/88 ,  H01L29/20 ,  H01L29/66

CPC分类号： H01L29/882 ,  H01L29/2003 ,  H01L29/66219

摘要： The present disclosure provides a resonant tunneling diode and a manufacturing method thereof. The resonant tunneling diode includes: a first barrier layer; a second barrier layer; and a potential well layer between the first barrier layer and the second barrier layer, a material of the first barrier layer being AlxInyN1-x-y, 1>x>0, 1>y>0, and/or a material of the second barrier layer being AlmInnN1-m-n, 1>m>0, 1>n>0, and a material of the well layer including a gallium element.

公开(公告)号：US11569184B2

公开(公告)日：2023-01-31

申请号：US17719056

申请日：2022-04-12

申请人： ROHM Co., Ltd.

发明人： Kazuisao Tsuruda

IPC分类号： H01L23/66 ,  H01Q15/16 ,  H01L29/20 ,  H01Q1/22 ,  H01Q19/13 ,  H01L29/88 ,  H01Q15/23

摘要： A terahertz device of the present invention includes a terahertz element generating an electromagnetic wave, a dielectric including a dielectric material and surrounding the terahertz element, a gas space including a gas, and a reflecting film serving as a reflecting portion. The reflecting film includes a portion opposing the terahertz element through the dielectric and the gas space and reflecting the electromagnetic wave toward a direction, wherein the electromagnetic wave is generated from the terahertz element and transmitted through the dielectric and the gas space. In addition, the refractive index of the dielectric is lower than the refractive index of the terahertz element and is higher than the refractive index of the gas in the gas space.

公开(公告)号：US11495596B2

公开(公告)日：2022-11-08

申请号：US16147512

申请日：2018-09-28

申请人： Intel Corporation

发明人： Uygar E. Avci ,  Daniel H. Morris ,  Ian A. Young

IPC分类号： H01L27/06 ,  H01L27/07 ,  H01L25/18 ,  H01L29/51 ,  H01L27/02 ,  H01L29/88 ,  H01L27/11519

摘要： An integrated circuit structure comprises a substrate having a memory region of and an adjacent logic region. A first N type well (Nwell) is formed in the substrate for the memory region and a second Nwell formed in the substrate for the logic region. A plurality of memory transistors in the memory region and a plurality of logic transistors are in the logic region, wherein ones the memory transistors include a floating gate over a channel, and a source and a drain on opposite sides of the channel. A diode portion is formed over one of the source and the drain of at least one of the memory transistors to conduct charge to the floating-gate of the at least one of the memory transistors for state retention during power gating.

公开(公告)号：US11355652B2

公开(公告)日：2022-06-07

申请号：US16644130

申请日：2017-09-29

申请人： Intel Corporation

发明人： Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC分类号： H01L29/88 ,  H01L27/02 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

摘要： Diodes employing one or more Group III-Nitride polarization junctions. A III-N polarization junction may include two III-N material layers having opposite crystal polarities. The opposing polarities may induce a two-dimensional charge sheet (e.g., 2D electron gas) within each of the two III-N material layers. Opposing crystal polarities may be induced through introduction of an intervening layer between two III-N material layers. The intervening layer may be of a material other than a Group III-Nitride. Where a P-i-N diode structure includes two Group III-Nitride polarization junctions, opposing crystal polarities at a first of such junctions may induce a 2D electron gas (2DEG), while opposing crystal polarities at a second of such junctions may induce a 2D hole gas (2DHG). Diode terminals may then couple to each of the 2DEG and 2DHG.

公开(公告)号：US11342482B2

公开(公告)日：2022-05-24

申请号：US16665358

申请日：2019-10-28

申请人： Wright State University ,  The Government of the United States of America, As Represented By The Secretary Of The Navy ,  OHIO STATE INNOVATION FOUNDATION

发明人： Elliott R. Brown ,  Weidong Zhang ,  Tyler Growden ,  Paul Berger ,  David Storm ,  David Meyer

IPC分类号： H01S5/34 ,  H01L33/06 ,  H01L29/88 ,  H01L33/32 ,  H01S5/343 ,  H01S5/14 ,  H01S5/187 ,  H01S5/02 ,  H01L33/00 ,  H01L33/12 ,  C02F1/32 ,  H01L29/20 ,  H01S5/042 ,  H01L33/50 ,  H01S5/183 ,  H01S5/30

摘要： Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

公开(公告)号：US20220140788A1

公开(公告)日：2022-05-05

申请号：US17510152

申请日：2021-10-25

申请人： CANON KABUSHIKI KAISHA

发明人： Toshifumi Yoshioka ,  Yasushi Koyama

IPC分类号： H03B7/14 ,  H03B7/08 ,  H01L29/88

摘要： An oscillator oscillating a tern hertz wave includes a negative resistive element including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, with a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor constitutes a resonator, wherein the negative resistive element is disposed between the first conductor and the second conductor, and a layer with a higher resistivity than the first semiconductor layer or the second semiconductor layer, or an amorphous layer is disposed between the negative resistive element and the dielectric.

公开(公告)号：US20210313445A1

公开(公告)日：2021-10-07

申请号：US17348718

申请日：2021-06-15

申请人： Micron Technology, Inc.

发明人： Gurtej S. Sandhu ,  Chandra Mouli

IPC分类号： H01L29/66 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/417 ,  H01L45/00 ,  H01L29/08 ,  H01L29/872 ,  H01L21/28 ,  H01L21/283 ,  H01L29/88

摘要： Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.