发明授权
- 专利标题： Method of producing a metallization layer structure
- 专利标题（中）： 生产金属化层结构的方法
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申请号： US588862申请日： 1990-09-27
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公开(公告)号： US5096749A公开(公告)日： 1992-03-17
- 发明人: Shigeki Harada , Masahiro Sugimoto
- 申请人： Shigeki Harada , Masahiro Sugimoto
- 申请人地址： JPX Kanagawa
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX62-213319 19870827
- 主分类号： C23C14/06
- IPC分类号： C23C14/06 ; C04B41/51 ; C04B41/52 ; C04B41/89 ; C23C14/14 ; C23C14/18 ; C23C14/58 ; H01L23/10 ; H05K1/03 ; H05K3/38
摘要：
A metallization layer structure containing, in order, an aluminum nitride ceramic base layer, an aluminum titanium nitride layer, a titanium layer, a heat-resistant metallic layer and a metallic layer for facilitating soldering and brazing. The aluminum titanium nitride layer is formed at the interface between the aluminum nitride ceramic base layer and the titanium layer by subjecting a laminate containing, in order, an aluminum nitride ceramic base layer, a titanium layer, a heat-resistant metallic layer and a metallic layer for facilitating soldering and brazing to a heat treatment within the range of 350.degree.-1000.degree. C. for 40 minutes.