发明授权
- 专利标题： Method of making a polysilicon emitter bipolar transistor
- 专利标题（中）： 制造多晶硅发射双极晶体管的方法
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申请号： US567835申请日： 1990-08-15
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公开(公告)号： US5096840A公开(公告)日： 1992-03-17
- 发明人: John C. Bean , Gregg S. Higashi , Bahram Jalali-Farahani , Clifford A. King
- 申请人： John C. Bean , Gregg S. Higashi , Bahram Jalali-Farahani , Clifford A. King
- 申请人地址： NJ Murray Hill
- 专利权人： AT&T Bell Laboratories
- 当前专利权人： AT&T Bell Laboratories
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/225 ; H01L21/331 ; H01L29/732
摘要：
The inventive method of making a poly-Si emitter transistor (PET) comprises opening an emitter window in a dielectric (typically SiO.sub.2) layer, and depositing onto the thus exposed surface and/or into the single crystal Si material that underlies the exposed surface at least one atomic species. This deposition step is following by the conventional poly-Si deposition, dopant implantation and "drive-in". In a currently preferred embodiment the novel deposition step comprises a low dose, low energy As implantation (5.times.10.sup.13 -2.times.10.sup.15 atoms/cm.sup.2, 0.1-5 keV). The novel method can result in significantly improved device characteristics, e.g., in a doubling of h.sub.FE, as compared to analogous prior art PETs.
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