发明授权
- 专利标题： Semiconductor device having current detection capability
- 专利标题（中）： 具有电流检测能力的半导体器件
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申请号： US672381申请日： 1991-03-20
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公开(公告)号： US5097302A公开(公告)日： 1992-03-17
- 发明人: Tatsuhiko Fujihira , Takeyoshi Nishimura
- 申请人： Tatsuhiko Fujihira , Takeyoshi Nishimura
- 申请人地址： JPX
- 专利权人： Fuji Electric Co., Ltd.
- 当前专利权人： Fuji Electric Co., Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX2-71397 19900320
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H01L27/04 ; H01L29/78
摘要：
In a power MOS-type semiconductor device with a current detection terminal, a first number of main MOSFET elements are connected to one another in parallel, and a second number of detection MOSFET elements are similarly connected to one another. First and second terminals of the main and detection MOSFET elements are commonly connected. A third terminal of one of the detection MOSFET element is used as the current detection terminal. The current or voltage measured at this detection terminal is substantially proportional to the ratio of the first number to the second number. To this end, the parasitic resistance in the device is increased so as to inhibit a leak current from flowing therethrough. Moreover, the ON resistance of each of the detection MOSFET elements is designed to be lower than that of a main MOSFET element by an amount which is a function of the first number and the detection resistance connected to the current detection terminal.
公开/授权文献
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