发明授权
- 专利标题: Method for evaluation of transition region of silicon epitaxial wafer
- 专利标题(中): 硅外延片过渡区评估方法
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申请号: US441304申请日: 1989-11-27
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公开(公告)号: US5099122A公开(公告)日: 1992-03-24
- 发明人: Katsuhiko Miki
- 申请人: Katsuhiko Miki
- 申请人地址: JPX Tokyo
- 专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX63-296321 19881125
- 主分类号: C30B29/06
- IPC分类号: C30B29/06 ; C30B25/02 ; C30B33/00 ; G02B6/13 ; H01L21/205 ; H01L21/66
摘要:
A method is disclosed for evaluation of the transition region of a silicon epitaxial wafer comprising obtaining the waveform of an interferogram signal for reflected light by irradiation the silicon epitaxial wafer with infrared radiation followed by measurement of the intensity of the light of the interference fringe employing a Michelson interferometer and obtaining the extent of the transition region of the silicon epitaxial wafer by measuring the distance between the maximum peak of the waveform in the side burst region in the interferogram signal and the peak adjacent to said maximum peak of the waveform in the side burst region in the interferogram signal and the distance between the maximum peak and the bottom first coming after said maximum peak of the waveform in the side burst region in the interferogram signal, or the difference in height between the maximum peak and the bottom first coming after said maximum peak of the waveform in the side burst region in the interferogram signal.
公开/授权文献
- US6138326A Mote knife 公开/授权日:2000-10-31
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