发明授权
US5102826A Method of manufacturing a semiconductor device having a silicide layer
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制造具有硅化物层的半导体器件的方法
- 专利标题： Method of manufacturing a semiconductor device having a silicide layer
- 专利标题（中）： 制造具有硅化物层的半导体器件的方法
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申请号： US610216申请日： 1990-11-09
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公开(公告)号： US5102826A公开(公告)日： 1992-04-07
- 发明人: Jiro Ohshima , Shin-ichi Taka , Toshiyo Motozima , Hiroshi Naruse
- 申请人： Jiro Ohshima , Shin-ichi Taka , Toshiyo Motozima , Hiroshi Naruse
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX1-293491 19891110
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/28 ; H01L21/285
摘要：
According to the method of manufacturing a semiconductor device of the present invention, an insulation film is formed on a silicon substrate, and a resist film having a predetermined pattern is formed on the insulation film, followed by forming an opening on the insulation film with the resist film performing as a mask. Then, an impurity having conductivity are implanted into said silicon substrate with the resist film performing as a mask and silicon ions are implanted into the silicon substrate with the resist film performing as a mask. After that, the resist film is removed. Further, a refractory metal film which covers at least the opening is formed. Moveover, a diffusion layer which causes electrical activation of the impurity having conductivity is formed by annealing, followed by formation a silicide layer at where the surfaces of the silicon substrate and the metal film meet.
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