发明授权
- 专利标题： Base developable negative acting photoresists
- 专利标题（中）： 基础可显影负性光致抗蚀剂
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申请号： US405493申请日： 1989-09-11
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公开(公告)号： US5106720A公开(公告)日： 1992-04-21
- 发明人: Werner H. Mueller , Dinesh N. Khanna
- 申请人： Werner H. Mueller , Dinesh N. Khanna
- 申请人地址： NJ Somerville
- 专利权人： Hoechst Celanese Corporation
- 当前专利权人： Hoechst Celanese Corporation
- 当前专利权人地址： NJ Somerville
- 主分类号： C08G73/10
- IPC分类号： C08G73/10 ; G03F7/023 ; G03F7/038
摘要：
A base developable negative acting photoresist composition which is thermally stable, provides high resolution at short exposure times and is capable of development by means of conventional aqueous alkaline developers. The present compositions comprise an alkali soluble hydroxylated polyamide and/or polyimide binder material, a photopolymerizable compound containing at least two ethylenically-unsaturated double bonds, and a light-sensitive photoinitiator.
公开/授权文献
- US5593580A Filtration cassette article, and filter comprising same 公开/授权日：1997-01-14
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