Invention Grant
- Patent Title: Process for etching
- Patent Title (中): 蚀刻工艺
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Application No.: US658254Application Date: 1991-02-20
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Publication No.: US5110408APublication Date: 1992-05-05
- Inventor: Takashi Fujii , Hironobu Kawahara , Kazuo Takata , Masaharu Nishiumi , Noriaki Yamamoto
- Applicant: Takashi Fujii , Hironobu Kawahara , Kazuo Takata , Masaharu Nishiumi , Noriaki Yamamoto
- Applicant Address: JPX Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JPX Tokyo
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/28 ; H01L21/3065 ; H01L21/308 ; H01L21/3213
Abstract:
The present invention relates to the etching of a gate film, a tungsten film, a silicon film, etc. In the present invention, use is made of an etching gas comprising a mixture composed of a reductive fluoride gas, a hydrocarbon gas and a halogen gas having a larger atomic diameter than a material to be etched, or a mixture composed of a reductive fluoride gas and a Cl-containing hydrocarbon gas, and the process comprises the step of conducting anisotropic etching of a material to be etched with an etching gas (a reductive fluoride gas), the step of forming a protective film by a depositing gas (a hydrocarbon gas), and the step of removing excess deposits formed as the protective film by means of a gas reactive with the protective film (a halogen gas or a Cl-containing hydrogen gas), wherein anisotropic etching is conducted by forming a protective film on a side wall while removing excess deposits formed as the protective film, thus enabling the anisotropic etching to be conducted with good accuracy.
Public/Granted literature
- US5872287A Amphipathic compound having succinic acid skeleton Public/Granted day:1999-02-16
Information query
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