发明授权
- 专利标题: Driving circuit for semiconductor element
- 专利标题(中): 半导体元件驱动电路
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申请号: US704593申请日: 1991-05-23
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公开(公告)号: US5111061A公开(公告)日: 1992-05-05
- 发明人: Hiroyuki Masuda
- 申请人: Hiroyuki Masuda
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX2-136861 19900525
- 主分类号: H03K17/08
- IPC分类号: H03K17/08 ; H03K17/0812 ; H03K17/082 ; H03K17/60
摘要:
A driving circuit for a semiconductor element to be controlled by a first and second transistors being connected in series to selectively take ON-operation responsive to application of forward of reverse bias, comprises a reverse bias stop judging circuit having a detecting circuit for detecting reverse bias current being connected in a circuit which connects the second transistor with the semiconductor element to be controlled, a level detecting means for detecting that reverse bias current continuously exceeds a set level for a predetermined time, according to the detected result of the detecting circuit, means for temporarily stopping application of reverse bias to the semiconductor element to be controlled according to the detected output of the level detecting means, and means for restarting application of reverse bias after a predetermined time.
公开/授权文献
- US4757005A Method and cell line for obtaining plasminogen activators 公开/授权日:1988-07-12
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