发明授权
US5126164A Method of forming a thin polymeric film by plasma reaction under
atmospheric pressure
失效
在大气压下通过等离子体反应形成薄聚合物膜的方法
- 专利标题: Method of forming a thin polymeric film by plasma reaction under atmospheric pressure
- 专利标题(中): 在大气压下通过等离子体反应形成薄聚合物膜的方法
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申请号: US522462申请日: 1990-05-14
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公开(公告)号: US5126164A公开(公告)日: 1992-06-30
- 发明人: Satiko Okazaki , Masuhiro Kogoma
- 申请人: Satiko Okazaki , Masuhiro Kogoma
- 申请人地址: JPX Tokyo
- 专利权人: Research Development Corporation of Japan
- 当前专利权人: Research Development Corporation of Japan
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX63-138630 19880606; JPX63-166599 19880704; JPX63-202977 19880815
- 主分类号: C23C16/30
- IPC分类号: C23C16/30 ; C23C16/34 ; C23C16/44 ; C23C16/455 ; C23C16/509 ; H01J37/32
摘要:
A process for forming a thin polymeric film is disclosed, which comprises introducing a mixture of an organic monomer gas and helium into a reaction vessel, producing a glow discharge plasma at atmospheric pressure and depositing the plasma on a substrate wherein the helium in the gas mixture is present in an amount higher than 90% by volume.
公开/授权文献
- US5958551A Structural element 公开/授权日:1999-09-28
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