发明授权
- 专利标题: Method for manufacturing an oxide superconducting thin-film
- 专利标题(中): 氧化物超导薄膜的制造方法
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申请号: US722410申请日: 1991-06-26
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公开(公告)号: US5126320A公开(公告)日: 1992-06-30
- 发明人: Tadao Miura , Yoshiaki Terashima , Akio Hori , Masayuki Sagoi
- 申请人: Tadao Miura , Yoshiaki Terashima , Akio Hori , Masayuki Sagoi
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX62-171220 19870710
- 主分类号: C23C14/08
- IPC分类号: C23C14/08 ; H01L39/24
摘要:
A method is disclosed which comprises setting a substrate within a mixed gas atmosphere containing 0.1 to 5% of oxygen gas and a balance as an inert gas, and sputtering a target member containing Ln, M, Cu and O within that atmosphere to obtain an oxygen-deficient perovskite type oxide superconducting thin-film of substantially Ln:M:Cu:O=1:2:3:(7-.delta.), where Ln represents at least one element selected from the rare earth elements and M represents at least one element selected from the group consisting of Ba, Sr, and Ca. The oxide superconducting thin-film of that composition ratio has a critical temperature of over 77K.
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