Invention Grant
- Patent Title: Improved ion implantation using a variable mass resolving system
- Patent Title (中): 使用可变质量分解系统改进离子植入
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Application No.: US628795Application Date: 1990-12-17
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Publication No.: US5130552APublication Date: 1992-07-14
- Inventor: Nicholas Bright , David R. Burgin , Timothy G. Morgan , Craig J. Lowrie , Hiroyuki Ito
- Applicant: Nicholas Bright , David R. Burgin , Timothy G. Morgan , Craig J. Lowrie , Hiroyuki Ito
- Applicant Address: CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: CA Santa Clara
- Main IPC: C23C14/48
- IPC: C23C14/48 ; H01J37/05 ; H01J37/09 ; H01J37/317 ; H01L21/265
Abstract:
An ion implantation system is modified to allow variation in the size of the aperture of the mass resolving system, thereby allowing more ions of one mass or ion of more than one mass, such as isotopes, to pass through said opening. Including all isotopes of the desired dopant ions to be collected increases beam current, and consequently the throughput of the implantation process, reduces contamination, and improves the dosage control.
Public/Granted literature
- US5805058A Control circuit for vehicular mounted passenger protecting devices Public/Granted day:1998-09-08
Information query
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