公开(公告)号：US11929229B2

公开(公告)日：2024-03-12

申请号：US18196548

申请日：2023-05-12

申请人： mi2-factory GmbH

发明人： Florian Krippendorf ,  Constantin Csato

IPC分类号： H01J37/317 ,  C23C14/18 ,  C23C14/48 ,  H01J37/05 ,  H01J37/147 ,  H01J37/20 ,  H01L21/04 ,  H01L29/32

CPC分类号： H01J37/05 ,  C23C14/18 ,  C23C14/48 ,  H01J37/1477 ,  H01J37/20 ,  H01J37/317 ,  H01J37/3171 ,  H01L21/046 ,  H01L29/32 ,  H01J2237/024 ,  H01J2237/057 ,  H01J2237/1518 ,  H01J2237/20214

摘要： A semiconductor wafer includes a first surface and an implantation area adjacent to the first surface and a certain distance away from the first surface, the implantation area including implanted particles and defects. A defect concentration in the implantation area deviates by less than 5% from a maximum defect concentration in the implantation area.

公开(公告)号：US20240047168A1

公开(公告)日：2024-02-08

申请号：US18266733

申请日：2021-12-07

申请人： mi2-factory GmbH

发明人： Constantin Csato ,  Florian Krippendorf ,  André Zowalla

IPC分类号： H01J37/05 ,  H01J37/317 ,  H01J37/147

CPC分类号： H01J37/05 ,  H01J37/3171 ,  H01J37/1474 ,  H01J2237/057

摘要： An energy filter assembly (1, 100, 200, 300) for ion implantation system is provided comprising an energy filter (25), a first filter frame (40), and at least one coupling element (50). The energy filter (25) has at least one filter element (25a) absorbing the beam energy of an ion beam (10). The at least one coupling element (50) elastically connects the first filter frame (40) with the energy filter (25).

公开(公告)号：US11837430B2

公开(公告)日：2023-12-05

申请号：US17491963

申请日：2021-10-01

申请人： mi2-factory GmbH

发明人： Florian Krippendorf ,  Constantin Csato

IPC分类号： H01J37/05 ,  H01J37/317 ,  H01J37/147

CPC分类号： H01J37/05 ,  H01J37/1472 ,  H01J37/317 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/002 ,  H01J2237/047 ,  H01J2237/057 ,  H01J2237/3171 ,  H01J2237/31705

摘要： A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.

公开(公告)号：US11810755B2

公开(公告)日：2023-11-07

申请号：US16717211

申请日：2019-12-17

申请人： Applied Materials, Inc.

发明人： Ludovic Godet ,  Joseph C. Olson ,  Rutger Meyer Timmerman Thijssen

IPC分类号： H01J37/305 ,  H01J37/32 ,  G02B6/13 ,  H01L21/3065 ,  G02B5/18 ,  H01J37/05 ,  G02B6/12 ,  G02B6/124 ,  G06T19/00 ,  H01J37/073 ,  H01J37/304 ,  H01J37/147

CPC分类号： H01J37/3053 ,  G02B5/1857 ,  G02B6/13 ,  H01J37/32422 ,  H01L21/3065 ,  G02B6/124 ,  G02B6/12007 ,  G02B2006/12176 ,  G06T19/006 ,  H01J37/05 ,  H01J37/073 ,  H01J37/1472 ,  H01J37/3045 ,  H01J37/32449 ,  H01J2237/303 ,  H01J2237/334

摘要： Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US20230326703A1

公开(公告)日：2023-10-12

申请号：US17715690

申请日：2022-04-07

申请人： Applied Materials, Inc.

发明人： Graham Wright ,  Ryan C. Prager

IPC分类号： H01J37/08 ,  H01J37/317 ,  H01J37/05 ,  C23C14/48

CPC分类号： H01J37/08 ,  H01J37/3171 ,  H01J37/05 ,  C23C14/48 ,  H01J2237/0815

摘要： An ion source is provided. The ion source may include an ion chamber to generate an ion beam comprising a metal ion species; and a charge source, coupled to deliver a metal vapor to the ion chamber, the charge source including a charge mixture. The charge mixture may include a first portion, comprising an elemental metal; and a second portion, comprising a heterogeneous metal fluoride compound.

公开(公告)号：US20220392735A1

公开(公告)日：2022-12-08

申请号：US17770576

申请日：2019-10-21

申请人： Applied Materials, Israel Ltd. ,  TECHNISCHE UNIVERSITEIT DELFT

发明人： Pieter Kruit ,  Ron Naftali ,  Jürgen Frosien ,  Ralf Schmid ,  Benjamin John Cook ,  Roman Barday ,  Dieter Winkler

IPC分类号： H01J37/147 ,  H01J37/05 ,  H01J37/20 ,  H01J37/12 ,  H01J37/28

摘要： A charged particle beam device for irradiating or inspecting a specimen is described. The charged particle beam device includes a charged particle beam source for generating a primary charged particle beam and a multi-aperture lens plate having a plurality of apertures for forming four or more primary. Two or more electrodes having one opening, e.g. having one opening each, for the primary charged particle beam or the four or more primary beamlets are provided. The charged particle beam device further includes a collimator for deflecting a first primary beamlet, a second primary beamlet, a third primary beamlet, and a fourth primary beamlet of the four or more primary beamlets with respect to each other. The charged particle beam device further includes an objective lens unit having three or more electrodes, each electrode having openings for the four or more primary beamlets.

公开(公告)号：US20220344151A1

公开(公告)日：2022-10-27

申请号：US17238808

申请日：2021-04-23

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Min Liu ,  Li-Li Su ,  Yee-Chia Yeo

IPC分类号： H01L21/02 ,  H01L21/3065 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786 ,  H01L27/092 ,  H01L29/08 ,  H01L29/165 ,  H01J37/32 ,  H01J37/05 ,  C23C16/50 ,  C23C16/08 ,  C23C16/02 ,  C23C16/56 ,  C30B25/10 ,  C30B25/14 ,  C30B25/18 ,  C30B29/52

摘要： A method includes flowing first precursors over a semiconductor substrate to form an epitaxial region, the epitaxial region includes a first element and a second element; converting a second precursor into first radicals and first ions; separating the first radicals from the first ions; and flowing the first radicals over the epitaxial region to remove at least some of the second element from the epitaxial region.

公开(公告)号：US11322333B2

公开(公告)日：2022-05-03

申请号：US17314023

申请日：2021-05-06

申请人： EL-MULTECHNOLOGIES LTD

发明人： Dmitry Shur ,  Eli Cheifetz ,  Armin Schon

IPC分类号： H01J37/24 ,  G02B27/10 ,  H01J37/22 ,  H01J37/05 ,  H01J37/244

摘要： A scintillator assembly including an entrance surface for receiving charged particles into the scintillator assembly, the charged particles including first charged particles at a first energy level and second charged particles at a second energy level. A first scintillator structure configured for receiving the first charged particles and generating a corresponding first signal formed of first photons with a first wavelength of λ1, a second scintillator structure configured for receiving the second charged particles and generating a corresponding second signal of second photons with a second wavelength of λ2, and an emitting surface for egress of a combined signal from the scintillator assembly, the combined signal including the first and second photons, and at least one beam splitter for receiving the combined signal and separating the combined signal to first and second photons.

公开(公告)号：US20210407762A1

公开(公告)日：2021-12-30

申请号：US17354986

申请日：2021-06-22

申请人： FEI Company

发明人： Peter TIEMEIJER ,  Evgeniia PECHNIKOVA ,  Rudolf GEURINK ,  Abhay KOTECHA ,  Jamie MCCORMACK

IPC分类号： H01J37/22 ,  H01J37/244 ,  H01J37/05 ,  H01J37/26

摘要： The disclosure relates to a method of imaging a specimen using a transmission charged particle microscope, said method comprising providing a specimen, and providing a charged particle beam and directing said charged particle beam onto said specimen for generating a flux of charged particles transmitted through the specimen. The method comprises the step of generating and recording a first energy filtered flux of charged particles transmitted through the specimen, wherein said first energy filtered flux of charged particles substantially consists of non-scattered and elastically scattered charged particles. The method as disclosed herein comprises the further step of generating and recording a second energy filtered flux of charged particles transmitted through the specimen, wherein said second energy filtered flux of charged particles substantially consists of inelastically scattered charged particles. Said first and second recorded energy filtered flux are then used for imaging said specimen with increased contrast.

公开(公告)号：US11199769B2

公开(公告)日：2021-12-14

申请号：US16008585

申请日：2018-06-14

申请人： Exogenesis Corporation

发明人： Sean R. Kirkpatrick ,  Rangarajan Jagannathan

IPC分类号： G03F1/80 ,  H01L21/311 ,  H01L21/265 ,  H01L21/02 ,  G03F1/82 ,  H05H3/02 ,  H01J37/317 ,  H01J37/147 ,  H01J37/05 ,  H01L21/321 ,  H01J37/31 ,  H01L29/36 ,  B24B37/04

摘要： A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.