发明授权
- 专利标题： Process for the manufacture of power-MOS semiconductor devices
- 专利标题（中）： 功率MOS半导体器件的制造工艺
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申请号： US632485申请日： 1990-12-24
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公开(公告)号： US5141883A公开(公告)日： 1992-08-25
- 发明人: Giuseppe Ferla , Carmelo Magro , Paolo Lanza
- 申请人： Giuseppe Ferla , Carmelo Magro , Paolo Lanza
- 申请人地址： ITX Agrate Brianza
- 专利权人： SGS-Thomson Microelectronics S.r.L.
- 当前专利权人： SGS-Thomson Microelectronics S.r.L.
- 当前专利权人地址： ITX Agrate Brianza
- 优先权： ITX22891A/89 19891229
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L29/45 ; H01L29/49 ; H01L29/78
摘要：
A process for the manufacture of power-MOS semiconductor devices achieves high cell density by the use of self-aligning techniques and photographic exposure equipment of the stepper type. The process calls for definition and formation of the source by a complementary spacer technique and metallization of the source and gate contact areas by silicides after formation of spacers on the gate wall.
公开/授权文献
- US5797274A Cooling of hot bodies 公开/授权日：1998-08-25
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