发明授权
- 专利标题： Lateral thyristor
- 专利标题（中）： 横向晶闸管
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申请号： US566520申请日： 1990-08-13
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公开(公告)号： US5142348A公开(公告)日： 1992-08-25
- 发明人: Manabu Imahashi , Hironori Kamiya
- 申请人： Manabu Imahashi , Hironori Kamiya
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electronics Corporation
- 当前专利权人： Matsushita Electronics Corporation
- 当前专利权人地址： JPX Osaka
- 优先权： JPX1-210954 19890816
- 主分类号： H01L29/74
- IPC分类号： H01L29/74
摘要：
A lateral thyristor is provided which includes a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on the semiconductor substrate, an anode diffusion layer of the first conductivity type formed in the epitaxial layer, a gate diffusion layer of the first conductivity type formed in the epitaxial layer, and a buried layer of the second conductivity type formed below the anode diffusion layer and extending between the semiconductor substrate and the epitaxial layer, wherein there is a region directly below the anode diffusion layer where the anode diffusion layer and the buried layer do not overlap each other, when the lateral thyristor is looked down upon in a direction perpendicular to the principal surface of the semiconductor substrate.
公开/授权文献
- US5681103A Electrostatic shutter particularly for an automotive headlamp 公开/授权日：1997-10-28
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