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1.发明申请METAL INSULATOR SEMICONDUCTOR STRUCTURE WITH POLARIZATION-COMPATIBLE BUFFER LAYER 有权具有极化兼容缓冲层的金属绝缘子半导体结构公开(公告)号：US20030207470A1
公开(公告)日：2003-11-06
申请号：US09899670
申请日：2001-07-05
IPC分类号： H01L021/00 , H01L021/336 , H01L021/8234
CPC分类号： H01L21/02304 , C23C16/448 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C23C18/1295 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/60 , H01L29/78391
摘要： An MIS device (20) includes a semiconducting substrate (22), a silicon nitride buffer layer (24), a ferroelectric metal oxide superlattice material (26), and a noble metal top electrode (28). The layered superlattice material (26) is preferably a strontium bismuth tantalate, strontium bismuth niobate, or strontium bismuth niobium tantalate. The device is constructed according to a preferred method that includes forming the silicon nitride on the semiconducting substrate prior to deposition of the layered superlattice material. The layered superlattice material is preferably deposited using liquid polyoxyalkylated metal organic precursors that spontaneously generate a layered superlattice upon heating of the precursor solution. UV exposure during drying of the precursor liquid imparts a C-axis orientation to the final crystal, and results in improved thin-film electrical properties.
摘要翻译： MIS器件（20）包括半导体衬底（22），氮化硅缓冲层（24），铁电金属氧化物超晶格材料（26）和贵金属顶电极（28）。 层状超晶格材料（26）优选为钽酸锶锶，铌酸铋锶或钽酸铋铌钽酸锶。 根据优选的方法构造器件，其包括在沉积层状超晶格材料之前在半导体衬底上形成氮化硅。 层状超晶格材料优选使用液体聚氧化烷基化的金属有机前体沉积，其在加热前体溶液时自发产生层状超晶格。 在前体液体的干燥期间的紫外线曝光赋予最终晶体C轴取向，并且导致改善的薄膜电性能。
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公开(公告)号：US20030155621A1
公开(公告)日：2003-08-21
申请号：US10370733
申请日：2003-02-24
IPC分类号： H01L029/76 , H01L031/062
CPC分类号： H01L27/0629 , H01L21/28088
摘要： After an insulating film serving as a gate insulating film is formed on a semiconductor substrate, a titanium nitride film is deposited by chemical vapor deposition on the insulating film. Then, a tungsten film is deposited by sputtering on the titanium nitride film. Subsequently, a multilayer film composed of the tungsten film and the titanium nitride film is patterned to form a gate electrode composed of the multilayer film.
摘要翻译： 在半导体衬底上形成用作栅极绝缘膜的绝缘膜之后，通过化学气相沉积在绝缘膜上沉积氮化钛膜。 然后，通过溅射在氮化钛膜上沉积钨膜。 随后，对由钨膜和氮化钛膜组成的多层膜进行构图以形成由多层膜构成的栅电极。
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公开(公告)号：US20030109088A1
公开(公告)日：2003-06-12
申请号：US10323637
申请日：2002-12-20
发明人： Katsunori Nishii , Yoshito Ikeda , Hiroyuki Masato , Kaoru Inoue
IPC分类号： H01L021/338
CPC分类号： H01L29/475 , H01L21/28581 , H01L29/2003 , H01L29/66856 , H01L29/66863 , H01L29/812 , H01L33/32 , H01L33/40
摘要： The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.
摘要翻译： 本发明的半导体器件包括：氮化镓（GaN）化合物半导体层; 和形成在GaN化合物半导体层上的肖特基电极，其中肖特基电极含有硅。
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公开(公告)号：US20020175387A1
公开(公告)日：2002-11-28
申请号：US10193173
申请日：2002-07-12
发明人： Hideyuki Nakanishi , Toru Tsuruta , Ryuma Hirano
IPC分类号： H01L021/00 , H01L031/0203
CPC分类号： G02B7/025 , G02B7/00 , H01L2224/48091 , H01L2224/48247 , H01S5/02216 , H01S5/02228 , H01S5/0228 , H01L2924/00014
摘要： An optoelectronic apparatus includes an optoelectronic device, a mounting portion, a frame member surrounding a periphery of the mounting portion, and an optical component. The optical component is placed on an optical component placement portion. The frame member includes a pair of first side walls and a pair of second side walls. Each of the pair of second side walls has a recessed portion and a protruded portion. The optical component is disposed between the protruded portions, and is fixed with an adhesive filled in the recessed portions.
摘要翻译： 光电子器件包括光电子器件，安装部分，围绕安装部分周围的框架部件和光学部件。 光学部件被放置在光学部件放置部分上。 框架构件包括一对第一侧壁和一对第二侧壁。 一对第二侧壁中的每一个具有凹部和突出部。 光学部件设置在突出部之间，并且用填充在凹部中的粘合剂固定。
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公开(公告)号：US20020132444A1
公开(公告)日：2002-09-19
申请号：US10150326
申请日：2002-05-20
IPC分类号： H01L021/76
摘要： The invention provides a bias circuit for suppressing change with temperature of an idle current of a power transistor and a semiconductor device including the bias circuit. The bias circuit includes a first bipolar transistor having an emitter, a base and a collector, and at least one Schottky diode connected to the base of the first bipolar transistor, and the at least one Schottky diode is provided for supplying a base potential for suppressing a collector current of the first bipolar transistor from changing in accordance with temperature change.
摘要翻译： 本发明提供一种用于抑制功率晶体管的空载电流随温度变化的偏置电路和包括该偏置电路的半导体器件。 偏置电路包括具有发射极，基极和集电极的第一双极晶体管和连接到第一双极晶体管的基极的至少一个肖特基二极管，并且提供至少一个肖特基二极管以提供用于抑制的基极电位 第一双极晶体管的集电极电流根据温度变化而变化。
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公开(公告)号：US20020098615A1
公开(公告)日：2002-07-25
申请号：US10079510
申请日：2002-02-22
IPC分类号： H01L021/00
CPC分类号： H01L29/66106 , H01L29/0638 , H01L29/866
摘要： A field oxide surrounding an active region, an N-type doped layer formed in the active region, and an electrode formed on the field oxide in the vicinity of the active region are provided on a P-type semiconductor substrate. During the operation as a constant voltage device, a desired voltage is applied to the electrode. Then, trapping of carriers in the interface between the field oxide and the semiconductor region can be suppressed, although such trapping is ordinarily caused by a reverse breakdown phenomenon at the pn junction between the doped layer and the P-type semiconductor substrate. Accordingly, the variation in strength of the electric field between the doped layer and the semiconductor substrate can be suppressed. As a result, it is possible to suppress a variation in reverse withstand voltage, which is usually caused by a reverse breakdown voltage at a pn junction, for a semiconductor device functioning as a constant voltage device.
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公开(公告)号：US20020033231A1
公开(公告)日：2002-03-21
申请号：US09892723
申请日：2001-06-28
发明人： Mitsuhiro Ohkuni
IPC分类号： H01L021/3065
CPC分类号： H01J37/32834 , H01J37/321 , H01L21/31138 , H01L21/32137
摘要： An apparatus for plasma etching comprises a chamber, a gas inlet port provided in the chamber to introduce etching gas into the chamber, a gas outlet port provided in a side portion of the chamber to exhaust the gas from said chamber, a sample stage provided within the chamber, and a spiral coil disposed externally of the chamber and in opposing relation with the sample stage to generate a plasma composed of the etching gas with a high-frequency induction field. The higher-voltage region of the spiral coil and the exhaust-side region of the sample stage are positioned on substantially the same side relative to the center axis of the chamber.
摘要翻译： 一种用于等离子体蚀刻的装置包括：室，设置在室中的气体入口，用于将蚀刻气体引入到室中;气体出口，设置在室的侧部以排出来自所述室的气体， 所述室和设置在所述室的外部并与所述样品台相对的螺旋线圈，以产生由所述蚀刻气体与高频感应场组成的等离子体。 螺旋线圈的高电压区域和样品台的排气侧区域相对于室的中心轴线位于基本相同的一侧。
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公开(公告)号：US20020011788A1
公开(公告)日：2002-01-31
申请号：US09746358
申请日：2000-12-21
IPC分类号： H01J029/80
CPC分类号： H01J29/076 , H01J2229/0755
摘要： A cathode ray tube capable of reducing the doming amount and suppressing the occurrence of moire stripes at the same time with improved effects to suppress the occurrence of moire stripes even more is provided. The protruding portions 28a, 28b are protruding from the ends of the horizontal direction of the aperture to the inside of the aperture 27. With regard to the horizontal cross sections of the protruding portions 28a, 28b, the portions facing each other left and right via the aperture are formed to be asymmetrical to the center line 29 in order to reduce or block the incident electron beam. By forming the protruding portions 28a, 28b, the doming amount can be reduced and the occurrence of moire stripes can be suppressed at the same time. Furthermore, by forming the portions facing each other left and right of the protruding portions asymmetrically, the effects to suppress the occurrence of moire stripes can be improved even more.
摘要翻译： 本发明提供一种能够同时降低隆起量并抑制莫尔条纹发生的阴极射线管，并且具有更好的抑制莫尔条纹发生的效果。 突出部分28a，28b从孔的水平方向的端部向孔27的内部突出。关于突出部分28a，28b的水平横截面，彼此相对的左右通孔 为了减少或阻挡入射的电子束，孔径形成为与中心线29不对称。 通过形成突出部28a，28b，可以减少隆起量，同时可以抑制莫尔条纹的发生。 此外，通过不对称地形成突出部分的左右两侧的部分，可以进一步提高抑制莫尔条纹发生的效果。
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公开(公告)号：US20010021572A1
公开(公告)日：2001-09-13
申请号：US09748436
申请日：2000-12-26
发明人： Kenzi Orita , Masahiro Ishida , Masaaki Yuri
IPC分类号： H01L021/00 , C30B001/00 , H01L021/36 , H01L021/477
CPC分类号： H01L21/0242 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/34333
摘要： A method for producing a semiconductor device of the present invention includes: heating a first semiconductor layer made of a Group III nitride-based compound semiconductor in gas containing nitrogen atoms; and growing a second semiconductor layer made of a Group III nitride-based compound semiconductor on the first semiconductor layer.
摘要翻译： 本发明的半导体装置的制造方法包括：在含有氮原子的气体中加热由III族氮化物系化合物半导体构成的第一半导体层; 以及在所述第一半导体层上生长由III族氮化物基化合物半导体制成的第二半导体层。
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公开(公告)号：US20010019530A1
公开(公告)日：2001-09-06
申请号：US09793675
申请日：2001-02-26
IPC分类号： G11B007/125 , G11B007/135
CPC分类号： G11B7/123
摘要： A semiconductor laser device is provided which can carry out recording and reproduction with respect to optical disks with different formats. In this semiconductor laser device, a receiving/emitting optics integrated substrate, in which two semiconductor laser elements with different emission wavelengths and a plurality of receiving optics are integrated, is disposed in a case and is sealed with a hologram element. A composite prism is placed on the hologram element. The distances, when measured in air, from the two semiconductor laser elements to a focusing means, for example, a collimator lens are set to be substantially equal. Thus, a small and inexpensive semiconductor laser device can be obtained. In addition, a single collimator lens can be employed, and thus the optical configuration is facilitated.
摘要翻译： 提供一种能够对不同格式的光盘执行记录和再现的半导体激光装置。 在该半导体激光器件中，将具有不同发射波长的两个半导体激光元件和多个接收光学元件集成在一起的接收/发射光学器件集成基板设置在壳体中并用全息元件密封。 复合棱镜放置在全息元件上。 在空气中测量时，从两个半导体激光元件到聚焦装置（例如准直透镜）的距离被设定为基本相等。 因此，可以获得小而便宜的半导体激光器件。 另外，可以采用单个准直透镜，因此有助于光学结构。
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