发明授权
- 专利标题： Method of forming a multiple layer dielectric and a hot film sensor therewith
- 专利标题（中）： 形成多层电介质和热膜传感器的方法
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申请号： US688361申请日： 1991-04-15
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公开(公告)号： US5158801A公开(公告)日： 1992-10-27
- 发明人: Purnell Hopson, Jr. , Sang Q. Tran
- 申请人： Purnell Hopson, Jr. , Sang Q. Tran
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the United States Administrator of the National Aeronautics and Space Administration
- 当前专利权人： The United States of America as represented by the United States Administrator of the National Aeronautics and Space Administration
- 当前专利权人地址： DC Washington
- 主分类号： G01F1/684
- IPC分类号： G01F1/684 ; G01P5/12
摘要：
The invention is a method of forming a multiple layer dielectric for use in a hot-film laminar separation sensor 21. The multiple layer dielectric substrate is formed by depositing a first layer 22 of a thermoplastic polymer such as on an electrically conductive substrate such as the metal surface 23 of a model 24 to be tested under cryogenic conditions and high Reynolds numbers. Next, a second dielectric layer 26 of fused silica is formed on the first dielectric layer 22 of thermoplastic polymer. A resistive metal film is deposited on selected areas of the multiple layer dielectric substrate to form one or more hot-film sensor elements 27 to which aluminum electrical circuits 28 deposited upon the multiple layered dielectric substrate are connected.
公开/授权文献
- US5835409A Compact page-erasable EEPROM non-volatile memory 公开/授权日：1998-11-10
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