发明授权
- 专利标题： Method of etching diamond thin films
- 专利标题（中）： 蚀刻金刚石薄膜的方法
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申请号： US670590申请日： 1991-03-18
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公开(公告)号： US5160405A公开(公告)日： 1992-11-03
- 发明人: Shigeaki Miyauchi , Koichi Miyata , Kazuo Kumagai , Koji Kobashi
- 申请人： Shigeaki Miyauchi , Koichi Miyata , Kazuo Kumagai , Koji Kobashi
- 申请人地址： JPX Kobe
- 专利权人： Kabushiki Kaisha Kobe Seiko Sho
- 当前专利权人： Kabushiki Kaisha Kobe Seiko Sho
- 当前专利权人地址： JPX Kobe
- 优先权： JPX2-71672 19900319
- 主分类号： C30B33/12
- IPC分类号： C30B33/12 ; C30B29/04 ; C30B33/00 ; H01L21/302 ; H01L21/3065
摘要：
Described is an etching method of a diamond film which comprises providing a diamond film in an atmosphere of a gas containing at least oxygen and/or hydrogen and subjecting the diamond film to an irradiation of an electron beam generated by direct current discharge through a pattern of a mask. In this condition, when the diamond film is contacted with the plasma produced by the electron beam in the atmosphere, the unmasked areas are irradiated by the electron beam, and converted to graphite. The graphite is more readily etched by the plasma, so that the diamond film can be etched at a high rate. The etching through a mask ensures a fine etched pattern of the diamond film. In addition, a diamond film with a large area can be etched by this method.
公开/授权文献
- US5686664A Atmospheric tide and air density detector 公开/授权日：1997-11-11
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