发明授权
US5162933A Active matrix structure for liquid crystal display elements wherein each
of the gate/data lines includes at least a molybdenum-base alloy layer
containing 0.5 to 10 wt. % of chromium
失效
用于每个门/数据线的液晶显示元件的主动矩阵结构至少包含0.5至10 WT的多晶合金层。 铬的百分比
- 专利标题： Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium
- 专利标题（中）： 用于每个门/数据线的液晶显示元件的主动矩阵结构至少包含0.5至10 WT的多晶合金层。 铬的百分比
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申请号： US697991申请日： 1991-05-10
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公开(公告)号： US5162933A公开(公告)日： 1992-11-10
- 发明人: Nobuhiko Kakuda , Tsutomu Wada , Kinya Kato , Tadamichi Kawada , Masamichi Okamura , Shigeo Aoki , Yasuhiro Ukai , Kiyoshi Taruta , Tomihisa Sunata , Hiroshi Saito , Takanobu Nakagawa
- 申请人： Nobuhiko Kakuda , Tsutomu Wada , Kinya Kato , Tadamichi Kawada , Masamichi Okamura , Shigeo Aoki , Yasuhiro Ukai , Kiyoshi Taruta , Tomihisa Sunata , Hiroshi Saito , Takanobu Nakagawa
- 申请人地址： JPX Tokyo JPX Osaka
- 专利权人： Nippon Telegraph and Telephone Corporation,Hosiden Corporation
- 当前专利权人： Nippon Telegraph and Telephone Corporation,Hosiden Corporation
- 当前专利权人地址： JPX Tokyo JPX Osaka
- 优先权： JPX2-124075 19900516; JPX2-124076 19900516; JPX2-124080 19900516; JPX2-124081 19900516
- 主分类号： G02F1/1345
- IPC分类号： G02F1/1345 ; G02F1/1362 ; H01L27/13
摘要：
In an active matrix structure for liquid crystal display elements which includes pixel electrodes arranged in a matrix form on a glass base plate, thin film transistors having their drains connected to the pixel electrodes, respectively, data lines each connected to sources of the thin film transistors of one column and gate lines connected to gates of the thin film transistors of one row, there are provided in the same plane a light blocking layer disposed opposite each of the thin film transistors across an insulating layer, a storage capacitance electrode disposed partly opposite each of the pixel electrodes across the insulating layer and storage capacitance lines for interconnecting the capacitance electrodes. The light blocking layers, the storage capacitance electrodes and the storage capacitance lines are formed of the same material and at the same time.
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