发明授权
- 专利标题： Manufacturing method for semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US759912申请日： 1991-09-13
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公开(公告)号： US5166099A公开(公告)日： 1992-11-24
- 发明人: Tetsuya Ueda , Osami Nakagawa , Haruo Shimamoto , Yasuhiro Teraoka , Seiji Takemura
- 申请人： Tetsuya Ueda , Osami Nakagawa , Haruo Shimamoto , Yasuhiro Teraoka , Seiji Takemura
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-244749 19900914; JPX3-130432 19910502
- 主分类号： H01L21/56
- IPC分类号： H01L21/56 ; H01L21/60 ; H01L23/495
摘要：
A manufacturing method for a semiconductor device in which an electrode of a semiconductor chip is electrically connected to an inner lead of a carrier tape. The electrodes of the semiconductor chip are brought into contact with the inner lead of the carrier tape. Bonding is performed with inner lead droop controlled to no more than 80 .mu.m.
公开/授权文献
- US4747322A Controlled torque transfer differential for a motor vehicle 公开/授权日：1988-05-31
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