发明授权
- 专利标题： Method for photo annealing non-single crystalline semiconductor films
- 专利标题（中）： 非单晶半导体膜的退火方法
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申请号： US520998申请日： 1990-05-09
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公开(公告)号： US5171710A公开(公告)日： 1992-12-15
- 发明人: Shunpei Yamazaki , Kunio Suzuki , Susumu Nagayama , Takashi Inujima , Masayoshi Abe , Takeshi Fukada , Mikio Kinka , Ippei Kobayashi , Katsuhiko Shibata , Masato Susukida , Kaoru Koyanagi
- 申请人： Shunpei Yamazaki , Kunio Suzuki , Susumu Nagayama , Takashi Inujima , Masayoshi Abe , Takeshi Fukada , Mikio Kinka , Ippei Kobayashi , Katsuhiko Shibata , Masato Susukida , Kaoru Koyanagi
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX60-170956 19850802; JPX60-186372 19850823
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L31/20
摘要：
An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.
公开/授权文献
- US5624849A Method and apparatus for filling glass capillary tubes 公开/授权日：1997-04-29
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