发明授权
US5172199A Compact nonvolatile semiconductor memory device using stacked active and
passive elements
失效
紧凑型非易失性半导体存储器件，使用堆叠的有源和无源元件
- 专利标题： Compact nonvolatile semiconductor memory device using stacked active and passive elements
- 专利标题（中）： 紧凑型非易失性半导体存储器件，使用堆叠的有源和无源元件
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申请号： US711056申请日： 1991-06-06
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公开(公告)号： US5172199A公开(公告)日： 1992-12-15
- 发明人: Yoshimitsu Yamauchi , Kenichi Tanaka , Keizo Sakiyama
- 申请人： Yoshimitsu Yamauchi , Kenichi Tanaka , Keizo Sakiyama
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX2-168101 19900625
- 主分类号： H01L27/112
- IPC分类号： H01L27/112 ; H01L21/8246 ; H01L27/115 ; H01L29/423
摘要：
A nonvolatile semiconductor memory device including a semiconductor substrate, a pair of impurity diffusion regions provided in the substrate, a gate region provided between the pair of impurity diffusion regions, a first gate electrode stacked on the gate region via a first dielectric film, and a second gate electrode stacked on the first gate electrode via a second dielectric film, the first gate electrode being electrically short-circuited to one of the impurity diffusion regions.
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