发明授权
- 专利标题： Insulated gate bipolar transistor and method of manufacturing the same
- 专利标题（中）： 绝缘栅双极晶体管及其制造方法
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申请号： US543532申请日： 1990-06-26
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公开(公告)号： US5182626A公开(公告)日： 1993-01-26
- 发明人: Hajime Akiyama , Hisao Kondoh
- 申请人： Hajime Akiyama , Hisao Kondoh
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX1-245914 19890920
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L29/08 ; H01L29/739
摘要：
In the present invention, baneful influences such as the reduction of the threshold voltage due to the irradiation of an ionizing radiation such as an electron beam and a light ion beam are removed to practice the lifetime control of an IGBT with good controllability. Basically, the lifetime control without change in the threshold voltage is implemented by increasing the threshold voltage on or before irradiating the ionizing radiation so as to cancel the influence of each other. Further, the lifetime control without change in the threshold voltage is implemented with higher accuracy by irradiating a light ion beam from a rear main electrode side so as to cause crystal defects locally in a specific region in an epitaxial layer.
公开/授权文献
- US5880492A Dedicated local line interconnect layout 公开/授权日：1999-03-09
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