发明授权
- 专利标题： Method of fabricating semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US658389申请日： 1991-02-20
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公开(公告)号： US5183780A公开(公告)日： 1993-02-02
- 发明人: Shigeru Noguchi , Satoshi Ishida , Hiroshi Iwata , Keiichi Sano , Shoichiro Nakayama
- 申请人： Shigeru Noguchi , Satoshi Ishida , Hiroshi Iwata , Keiichi Sano , Shoichiro Nakayama
- 申请人地址： JPX Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX2-42135 19900222
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/02 ; H01L21/20 ; H01L21/225 ; H01L21/285 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L29/786 ; H01L29/92
摘要：
In a method of fabricating a semiconductor device according to the present invention, a semiconductor film is formed on a substrate, and an insulator film is formed so as to cover the semiconductor film. Then, a dopant source is arranged on the insulator film and then, a region for electrical contact is irradiated with a high-energy beam through the dopant source. Consequently, the insulator film and the semiconductor film in the irradiated region are melted, to form a polycrystalline contact region having impurities supplied from the dopant source doped therein. Thus, the high-energy beam is irradiated to the region for electrical contact through the dopant source to form the polycrystalline contact region, thereby to make it possible to omit the patterning process such as etching processing for providing a contact hole.
公开/授权文献
- US5820585A Angiographic and arteriographic balloon catheter 公开/授权日：1998-10-13