Invention Grant
- Patent Title: Process for preparing electrical connection means, in particular interconnection substances of hybrid circuits
- Patent Title (中): 用于制备电连接装置的方法,特别是混合电路的互连物质
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Application No.: US684434Application Date: 1991-04-11
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Publication No.: US5194294APublication Date: 1993-03-16
- Inventor: Frederic Rotman , Dominique Navarro , Sylvie Mellul
- Applicant: Frederic Rotman , Dominique Navarro , Sylvie Mellul
- Applicant Address: FRX Paris
- Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- Current Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- Current Assignee Address: FRX Paris
- Priority: FRX8902172 19890220
- Main IPC: C04B41/45
- IPC: C04B41/45 ; H05K1/09 ; H05K3/12
Abstract:
The invention relates to a process for preparing interconnection substrates of hybrid circuits, comprising effecting on a support the deposition of a thick layer of ink or paste based on a non-noble metal, such as copper or other material having a "copper compatible" formulation, by carrying out in succession a preliminary drying for eliminating solvents at a temperature on the order of 100.degree. C. to 150.degree. C., a firing comprising:a) a temperature rise incorporating a stage for eliminating polymer resins,b) a sintering step at a temperature on the order of 600.degree. C. to 1000.degree. C., andc) a timed cooling,the firing being carried out under a substantially inert gas atmosphere (nitrogen and/or argon and/or helium), the atmosphere of the stage for eliminating the polymer resins having a content of water vapor lower than 15,000 ppm, preferably between 1,000 and 10,000 ppm, while the atmosphere for sintering at high temperature has a content of water vapor in any case lower than 1,000 ppm.
Public/Granted literature
- US5801420A Lateral semiconductor arrangement for power ICS Public/Granted day:1998-09-01
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