公开(公告)号：US5194294A

公开(公告)日：1993-03-16

申请号：US684434

申请日：1991-04-11

Applicant: Frederic Rotman ,  Dominique Navarro ,  Sylvie Mellul

Inventor： Frederic Rotman ,  Dominique Navarro ,  Sylvie Mellul

IPC: C04B41/45 ,  H05K1/09 ,  H05K3/12

CPC classification number: H05K3/1291 ,  C04B41/4519 ,  H05K1/092 ,  H05K2203/086 ,  H05K2203/1126 ,  H05K2203/1476

Abstract: The invention relates to a process for preparing interconnection substrates of hybrid circuits, comprising effecting on a support the deposition of a thick layer of ink or paste based on a non-noble metal, such as copper or other material having a "copper compatible" formulation, by carrying out in succession a preliminary drying for eliminating solvents at a temperature on the order of 100.degree. C. to 150.degree. C., a firing comprising:a) a temperature rise incorporating a stage for eliminating polymer resins,b) a sintering step at a temperature on the order of 600.degree. C. to 1000.degree. C., andc) a timed cooling,the firing being carried out under a substantially inert gas atmosphere (nitrogen and/or argon and/or helium), the atmosphere of the stage for eliminating the polymer resins having a content of water vapor lower than 15,000 ppm, preferably between 1,000 and 10,000 ppm, while the atmosphere for sintering at high temperature has a content of water vapor in any case lower than 1,000 ppm.

Abstract translation: 本发明涉及一种用于制备混合电路的互连基板的方法，其包括在支撑物上沉积基于非贵金属（例如铜或其它具有“铜兼容性”配方）的材料的油墨或糊状物的厚层 通过连续进行在大约100℃至150℃的温度下消除溶剂的初步干燥，焙烧包括：a）包括用于消除聚合物树脂的阶段的温度升高，b）烧结 在大约600℃至1000℃的温度下进行步骤，c）定时冷却，在基本惰性的气体气氛（氮气和/或氩气和/或氦气）下进行焙烧，气氛 用于除去水蒸汽含量低于15,000ppm，优选1,000至10,000ppm的聚合物树脂的阶段，而在高温下烧结的气氛在任何情况下都低于1,000 ppm。

公开(公告)号：US5004489A

公开(公告)日：1991-04-02

申请号：US483177

申请日：1990-02-22

Applicant: Frederic Rotman ,  Yannick Rancon ,  Philippe Queille ,  Michel Olivier

Inventor： Frederic Rotman ,  Yannick Rancon ,  Philippe Queille ,  Michel Olivier

IPC: C01B5/00 ,  C03C27/02 ,  C03C27/04

CPC classification number: C01B5/00 ,  C03C27/02 ,  C03C27/046

Abstract: The invention concerns glass-metal sealing comprising effecting on a metallic piece, in particular an alloy based on iron and nickel or iron, nickel and cobalt, first of all a decarburization under an atmosphere, at a temperature of between 950.degree. C. and 1,150.degree. C., formed by hydrogen (10 to 99%), water vapor (1 to 8%), with a ratio hydrogen/water vapor higher than five, the possible remainder being nitrogen, then an oxidation under an atmosphere formed by an inert vector gas such as nitrogen, either at a temperature of 600.degree. C. to 800.degree. C. and with a water vapor content of 8% to 2%; or at a temperature of 900.degree. C. to 1,100.degree. C. and with a water vapor content of 4% to 0.5%; then establishing the connection. The gas mixture for a treatment atmosphere is obtained by mixing nitrogen and hydrogen conducted through pipes (13, 14), to which oxygen is added through a pipe (15) upstream of a catalytic chamber (11) permitting the elimination of the oxygen and the production of a content of water vapor.

Abstract translation: 本发明涉及玻璃 - 金属密封，其包括在金属片上，特别是基于铁和镍或铁，镍和钴的合金，首先在气氛下脱碳，温度为950℃至1150℃ 由氢气（10至99％），水蒸气（1至8％）形成的氢气/水蒸汽高于5的氢气，可能的余量为氮气，然后在惰性气氛下氧化 载体气体如氮气，温度在600℃至800℃，水汽含量为8％至2％; 或在900〜1100℃的温度下，水汽含量为4〜0.5％。 然后建立连接。 用于处理气氛的气体混合物通过混合通过管（13,14）导入的氮气和氢气而获得，氧气通过允许消除氧气的催化室（11）上游的管（15）加入到其中， 生产水汽含量。

公开(公告)号：US5409159A

公开(公告)日：1995-04-25

申请号：US253248

申请日：1994-06-02

Applicant: Robert W. Connors ,  Frederick W. Giacobbe ,  Benjamin J. Jurcik, Jr. ,  Frederic Rotman ,  Kevin P. McKean

Inventor： Robert W. Connors ,  Frederick W. Giacobbe ,  Benjamin J. Jurcik, Jr. ,  Frederic Rotman ,  Kevin P. McKean

IPC: B23K31/02 ,  B23K1/08 ,  B23K3/06 ,  H05K3/34 ,  B23K1/00 ,  B23K3/00

CPC classification number: B23K3/0653 ,  B23K1/085

Abstract: A circuit board is wave soldered as it is carried by a conveyor through a solder wave established in a solder reservoir. Disposed on both sides of the solder wave are gas plenums which discharge shield gas. Each gas plenum includes a top wall, a side wall, and a bottom wall. The side wall is spaced horizontally from the wave, and the bottom wall is submerged within the solder. The side and (optionally) top walls include orifices for directing shield gas (i) at high velocity toward the solder wave to protect the solder wave with an atmosphere of shield gas, and (ii) upwardly toward an underside of the circuit board to strip entrained air therefrom. Instead of being submerged within the solder, the bottom wall could be spaced above the solder and provided with orifices to emit shield gas downwardly between the plenum and solder reservoir to create an inert atmosphere above the solder. Dividers disposed within the plenum form sub-chambers communicating with orifices in respective walls of the plenum so that different gas velocities can be entitled from the orifices. The gas plenums can be rotatably adjustable and further adjustable either vertically or horizontally.

Abstract translation: 电路板通过由焊料储存器中建立的焊波传输通过波导焊接。 在焊波两侧设置放电保护气体的气室。 每个气室包括顶壁，侧壁和底壁。 侧壁与波浪水平隔开，底壁浸没在焊料内。 侧壁和（可选地）顶壁包括用于将屏蔽气体（i）以高速度朝向焊波引导的孔，以保护焊波与保护气体的气氛，以及（ii）向上朝向电路板的下侧以剥离 夹带空气。 代替浸没在焊料中，底壁可以在焊料上方间隔开并且具有孔，以在气室和焊料储存器之间向下发射屏蔽气体，以在焊料上方产生惰性气氛。 设置在增压室内的分隔器形成与气室的相应壁中的孔连通的子室，使得可以从孔中获得不同的气体速度。 气室可以可旋转调节，并可进一步垂直或水平调节。

公开(公告)号：US5230847A

公开(公告)日：1993-07-27

申请号：US718984

申请日：1991-06-21

Applicant: Pierre Jalby ,  Pierre Claverie ,  Frederic Rotman ,  Masao Kimura ,  Jean-Marie Friedt ,  Juichi Arai

Inventor： Pierre Jalby ,  Pierre Claverie ,  Frederic Rotman ,  Masao Kimura ,  Jean-Marie Friedt ,  Juichi Arai

IPC: C23C16/01 ,  C23C16/14 ,  C23C16/42

CPC classification number: C23C16/42 ,  C23C16/01 ,  C23C16/14 ,  Y10T29/49982

Abstract: The present invention provides a method of forming a free standing shape made of a material containing refractory metal, which entails providing a mandrel in a CVD enclosure, injecting a refractory halide gas and a reducing gas in the enclosure, reacting the gases in the enclosure to generate a material containing refractory metal, growing a layer of the material containing refractory metal on the mandrel and removing the mandrel to obtain the free standing shape, wherein the reducing gases is a silicon hydride gas or a mixture thereof.

公开(公告)号：US5082606A

公开(公告)日：1992-01-21

申请号：US483182

申请日：1990-02-22

Applicant: Frederic Rotman ,  Yannick Rancon ,  Philippe Queille ,  Michel Olivier

Inventor： Frederic Rotman ,  Yannick Rancon ,  Philippe Queille ,  Michel Olivier

IPC: C04B41/45 ,  C04B41/51 ,  C04B41/81 ,  C04B41/88 ,  H01G4/12 ,  H01L21/48 ,  H01L23/12 ,  H05K1/09 ,  H05K3/46

CPC classification number: C04B41/009 ,  C04B41/4519 ,  C04B41/51 ,  C04B41/81 ,  C04B41/88 ,  H01L21/4846 ,  C04B2111/00844 ,  H05K1/092 ,  H05K3/4611 ,  H05K3/4629

Abstract: The invention concerns the production of ceramic-metal multilayer components comrising effecting, after making up in the crude state, in particular by metallization and stacking of pre-cut raw ceramic bands, a simultaneous firing operation, termed cofiring, on the components under an atmosphere based on hydrogen or nitrogen or a mixture of hydrogen and nitrogen, having a regulated water vapor content at a temperature of first of all between 800.degree. C. and 1800.degree. C., and more precisely either at a moderately high temperature plateau between 800.degree. C. and 1300.degree. C. for certain ceramic materials such as codierite and metallic materials such as copper and nickel, or at a temperature plateau between about 1400.degree. C. and 1800.degree. C. for refractory materials such as tungsten, molybdenum, alumina, according to which the atmosphere having a water vapor content is obtained by addition to a vector gas at (13) and (14) of a quantity of additional oxygen (15), and a quantity of additional hydrogen at (14) sufficient to obtain by hydrogen-oxidation reaction the predetermined water vapor content, and determining these quantities of addition of oxygen and the contingent addition of hydrogen so that said water vapor content is, in the course of the cofiring, that which is the most appropriate for the different stages of said cofiring.

Abstract translation: 本发明涉及在原油状态特别是通过金属化和预切割的原始陶瓷带的堆叠之后产生的陶瓷 - 金属多层组分的生产，在气氛下的组分上同时进行称为共烧的操作 基于氢或氮或氢和氮的混合物，在800℃至1800℃之间的温度下具有调节的水蒸汽含量，更精确地在800℃至800℃的中等高温平台 对于某些陶瓷材料如铜，镍和金属材料如铜和镍，或在约1400℃至1800℃之间的温度下，对于诸如钨，钼，氧化铝等耐火材料， 根据该气氛，通过在（13）和（14）中向量气体中加入一定量的附加氧（15）获得具有水蒸气含量的气氛，并且一定量的附加水 （14）足以通过氢氧化反应获得预定的水蒸汽含量，并确定这些氧的加入量和偶然添加氢，使得在共烧的过程中所述水蒸汽含量是 是最适合于所述共烧的不同阶段。

公开(公告)号：US5520320A

公开(公告)日：1996-05-28

申请号：US231068

申请日：1994-04-22

Applicant: Kevin McKean ,  Frederic Rotman ,  Robert W. Connors

Inventor： Kevin McKean ,  Frederic Rotman ,  Robert W. Connors

IPC: B23K1/08 ,  H05K3/34 ,  B23K35/38

CPC classification number: H05K3/3468 ,  B23K1/085 ,  B23K2201/36 ,  H05K2203/086 ,  H05K2203/111

Abstract: The present invention relates to a wave soldering process wherein an inert gas atmosphere is injected inside the wave soldering machine, the inert gas atmosphere having a temperature which might be controlled. Particularly, the atmosphere can be heated at the same or different temperatures before injection, for example in the preheating zones, in the machine. The atmosphere can also be cooled (or injected at ambient temperature) e.g. in the cooling zone. Various atmospheres can be used (similar or different from one zone to another). Also, maintaining the atmosphere under forced laminer flow conditions improves the quality of the solder joints. The thermal efficiency of the heat transfer between the atmosphere and the printed circuit boards is thus greatly enhanced, which means less solder defects, higher components density and decrease of energy consumption and inert gas flow rate.

Abstract translation: 本发明涉及一种波峰焊工艺，其中在波峰焊机内部注入惰性气体气氛，该惰性气体气氛具有可被控制的温度。 特别地，可以在注射之前，例如在机器中的预热区域中，以相同或不同的温度加热气氛。 气氛也可以冷却（或在环境温度下进行注射）。 在冷却区。 可以使用各种气氛（与一个区域相似或不同）。 此外，在强制层流机流动条件下保持气氛提高了焊点的质量。 因此大气和印刷电路板之间传热的热效率大大提高，这意味着更少的焊料缺陷，更高的组件密度以及能量消耗和惰性气体流量的降低。

公开(公告)号：US5160765A

公开(公告)日：1992-11-03

申请号：US484322

申请日：1990-02-22

Applicant: Frederic Rotman ,  Yannick Rancon ,  Philippe Queille ,  Michel Olivier

Inventor： Frederic Rotman ,  Yannick Rancon ,  Philippe Queille ,  Michel Olivier

IPC: C04B41/45 ,  C04B41/51 ,  C04B41/81 ,  C04B41/88 ,  H01G4/12 ,  H01L21/48 ,  H01L23/12 ,  H05K1/09

CPC classification number: C04B41/009 ,  C04B41/4519 ,  C04B41/51 ,  C04B41/5138 ,  C04B41/81 ,  C04B41/88 ,  H01L21/4846 ,  H05K1/092

Abstract: Metallization of ceramics of the type comprising depositing a metallic paste based on molybdenum and/or tungsten and manganese on a ceramic substrate and effecting the sintering of the paste in an atmosphere having a predetermiend oxido-reduction potential, with a rise in and a maintenance of a temperature between 1300.degree. C. and 1600.degree. C., then cooling to ambient temperature, with production of an atmosphere by the addition to a pure neutral gas of a quantity of additional oxygen and a quantity of hydrogen at least sufficient to subsequently obtain by catalytic reaction the desired content of water vapour and contingently the excess content of hydrogen.

Abstract translation: 金属化的陶瓷类型包括在陶瓷基体上沉积基于钼和/或钨和锰的金属膏，并且在具有预制氧化还原电位的气氛中进行糊状物的烧结，随着温度升高和维持 温度在1300℃至1600℃之间，然后冷却至环境温度，通过加入一定量的额外氧气和一定量的氢气的纯中性气体生成气氛，至少足以随后通过 催化反应所需的水蒸气含量，偶然的是氢过量。

公开(公告)号：US5059450A

公开(公告)日：1991-10-22

申请号：US495028

申请日：1990-03-16

Applicant: Sylvie Mellul ,  Frederic Rotman ,  Dominique Navarro

Inventor： Sylvie Mellul ,  Frederic Rotman ,  Dominique Navarro

IPC: H05K3/12 ,  H01L21/48 ,  C23C26/00

CPC classification number: H01L21/4867

Abstract: The process comprises, after deposition of a layer of raw ink on a support having a high thermal dissipation, of the aluminium nitride type, effecting a preliminary drying of this ink at a temperature on the order of 100.degree. C. to 150.degree. C., then a firing comprising:(a) a temperature rise including a polymer resin eliminating stage,(b) a sintering plateau at a temperature on the order of 600.degree. C. to 1000.degree. C., and(c) a timed cooling,wherein the atmosphere of the polymer resin eliminating stage has an oxygen content of between 100 ppm and 5000 ppm, while the oxygen contents of the high temperature sintering atmosphere and of the cooling atmosphere must be lower than about 10 ppm.

Abstract translation: 该方法包括在将一层原始油墨沉积在具有高散热性的支撑体上之后，在氮化铝类型中，在大约100℃至150℃的温度下进行该油墨的初步干燥。 然后进行焙烧，其包括：（a）包括聚合物树脂消除阶段的温度升高，（b）在约600℃至1000℃的温度下的烧结平台，和（c）定时冷却， 其中聚合物树脂消除阶段的气氛的氧含量在100ppm和5000ppm之间，而高温烧结气氛和冷却气氛的氧含量必须低于约10ppm。

公开(公告)号：US5055246A

公开(公告)日：1991-10-08

申请号：US643490

申请日：1991-01-22

Applicant: Pierre Jalby ,  Pierre Claverie ,  Frederic Rotman ,  Masao Kimura ,  Jean-Marie Friedt ,  Juichi Arai

Inventor： Pierre Jalby ,  Pierre Claverie ,  Frederic Rotman ,  Masao Kimura ,  Jean-Marie Friedt ,  Juichi Arai

IPC: C23C14/34 ,  C23C16/42 ,  H01L21/28 ,  H01L21/285

CPC classification number: C23C14/3414 ,  C23C16/42

Abstract: The invention relates to a process of making a high purity silicide target comprising the steps of providing a substrate in a CVD enclosure, evacuating said enclosure up to a pressure P1 which is at least equal to or smaller than 5.times.10.sup.-5 Torr, heating the substrate at a temperature T1, which is at least equal to or greater than 20.degree. C., injecting in said enclosure a refractory metal halide MXm having a purity, as far as metallic impurities are concerned, greater than 5N (99,999%) and a silicon hydride having a purity, as far as metallic impurities are concerned, greater than 6N (99,9999%) setting the pressure in the enclosure between about 0.01 Torr and the atmospheric pressure while maintaining the temperature in the CVD enclosure between about 20.degree. C., growing a refractory metal silicide layer on the substrate to make a target having a purity, as far as metallic impurities are concerned, greater than 5N (99,99%), maintaining the temperature in the enclosure during said growing step at a value T2 which is not greater than T1, then withdrawing the target from said CVD enclosure.