发明授权
- 专利标题： Method of manufacturing a contact structure for a semiconductor device
- 专利标题（中）： 制造半导体器件的接触结构的方法
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申请号： US671525申请日： 1991-03-19
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公开(公告)号： US5194404A公开(公告)日： 1993-03-16
- 发明人: Yoshiki Nagatomo
- 申请人： Yoshiki Nagatomo
- 申请人地址： JPX Tokyo
- 专利权人： Oki Electric Industry Co. Ltd.
- 当前专利权人： Oki Electric Industry Co. Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-69679 19900322
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/28 ; H01L21/285 ; H01L21/768 ; H01L23/52
摘要：
A method of manufacturing a low resistance contact structure for a semiconductor device wherein a polycide layer is formed on a semiconductor substrate, and the surface of the substrate is covered with an interlayer isolation layer which is provided with a contact hole over the polycide layer. After filling the contact hole with polycrystalline silicon or forming a polycrystalline silicon contact or a polycide structure contact which connects to the polycide layer at the contact hole, the structure is subjected to a short term and high temperature annealing treatment at a temperature over 900.degree. C.
公开/授权文献
- US5703220A Genes encoding melanocertin-4 receptor and methods of use 公开/授权日：1997-12-30
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