发明授权
US5198371A Method of making silicon material with enhanced surface mobility by
hydrogen ion implantation
失效
通过氢离子注入制备具有增强的表面迁移率的硅材料的方法
- 专利标题： Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
- 专利标题（中）： 通过氢离子注入制备具有增强的表面迁移率的硅材料的方法
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申请号： US587227申请日： 1990-09-24
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公开(公告)号： US5198371A公开(公告)日： 1993-03-30
- 发明人: Jianming Li
- 申请人： Jianming Li
- 申请人地址： NY Locust Valley
- 专利权人： Biota Corp.
- 当前专利权人： Biota Corp.
- 当前专利权人地址： NY Locust Valley
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/322 ; H01L21/762
摘要：
A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.
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