Invention Grant
US5200653A Tristate output gate structure particularly for CMOS integrated circuits
失效
特别适用于CMOS集成电路的三通输出门结构
- Patent Title: Tristate output gate structure particularly for CMOS integrated circuits
- Patent Title (中): 特别适用于CMOS集成电路的三通输出门结构
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Application No.: US718669Application Date: 1991-06-21
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Publication No.: US5200653APublication Date: 1993-04-06
- Inventor: David Moloney , Gianfranco Vai , Maurizio Zuffada , Giorgio Betti
- Applicant: David Moloney , Gianfranco Vai , Maurizio Zuffada , Giorgio Betti
- Applicant Address: ITX
- Assignee: SGS-Thomson Microelectronics S.r.l.
- Current Assignee: SGS-Thomson Microelectronics S.r.l.
- Current Assignee Address: ITX
- Priority: ITX20728A/90 19900622
- Main IPC: H03K19/0175
- IPC: H03K19/0175 ; H03K19/094 ; H03K19/0948
Abstract:
The tristate output gate structure particularly for CMOS integrated circuits, comprises an enable terminal receiving an enable signal and an input terminal receiving an input signal, which connects, through signal switching means, an output terminal to a positive power supply terminal or to a negative power supply terminal. The enable terminal can be electrically connected to the gate terminal of a first P-channel transistor through signal inverting means and to the gate terminal of a second N-channel transistor. The output terminal is electrically connected to the drain terminals of the first and second transistors. The first and second transistors electrically insulate the output terminal from the input terminal.
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