发明授权
- 专利标题: Manufacturing method of photovoltaic device
- 专利标题(中): 光伏器件的制造方法
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申请号: US808444申请日: 1991-12-16
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公开(公告)号: US5202271A公开(公告)日: 1993-04-13
- 发明人: Shinichi Kouzuma , Hiroshi Inoue , Kenji Murata , Hiroyuki Tanaka , Yasuo Kishi
- 申请人: Shinichi Kouzuma , Hiroshi Inoue , Kenji Murata , Hiroyuki Tanaka , Yasuo Kishi
- 申请人地址: JPX Osaka
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX2-408211 19901227; JPX3-231781 19910911
- 主分类号: H01L31/04
- IPC分类号: H01L31/04 ; H01L31/0392 ; H01L31/048 ; H01L31/20
摘要:
A manufacturing method of a photovoltaic device, whereby a photovoltaic device of a large area in the laminated structure of a first resin layer with light- transmitting property, a photo-electric converting element consisting of a transparent electrode layer, a thin-film semiconductor layer and a back electrode layer, and a second resin layer in this order is mechanically cut into an optional size, which is followed by a step wherein the first and second resin layers of the cut photovoltaic device of a smaller area are thermally treated or at least one of the transparent electrode layer and back electrode layer at the section is etched and removed. Because of the above treatment for the cut photovoltaic device of a smaller area, an electric short circuit between the transparent electrode layer and back electrode layer at the section is prevented.
公开/授权文献
- US6160281A Active pixel sensor with inter-pixel function sharing 公开/授权日:2000-12-12
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