发明授权
US5202284A Selective and non-selective deposition of Si.sub.1-x Ge.sub.x on a Si
subsrate that is partially masked with SiO.sub.2
失效
SI1-XGEX的选择性和非选择性沉积在部分被SIO2掩蔽的SI
- 专利标题： Selective and non-selective deposition of Si.sub.1-x Ge.sub.x on a Si subsrate that is partially masked with SiO.sub.2
- 专利标题（中）： SI1-XGEX的选择性和非选择性沉积在部分被SIO2掩蔽的SI
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申请号： US444464申请日： 1989-12-01
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公开(公告)号： US5202284A公开(公告)日： 1993-04-13
- 发明人: Theodore I. Kamins , David B. Noble , Judy L. Hoyt , James F. Gibbons , Martin P. Scott
- 申请人： Theodore I. Kamins , David B. Noble , Judy L. Hoyt , James F. Gibbons , Martin P. Scott
- 申请人地址： CA Palo Alto
- 专利权人： Hewlett-Packard Company
- 当前专利权人： Hewlett-Packard Company
- 当前专利权人地址： CA Palo Alto
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/20
摘要：
Several methods are disclosed for minimizing the number of defects or misfit locations in a SiGe layer selectively or non-selectively deposited on a partially oxide masked Si substrate.
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