公开(公告)号：US5202284A

公开(公告)日：1993-04-13

申请号：US444464

申请日：1989-12-01

申请人： Theodore I. Kamins ,  David B. Noble ,  Judy L. Hoyt ,  James F. Gibbons ,  Martin P. Scott

发明人： Theodore I. Kamins ,  David B. Noble ,  Judy L. Hoyt ,  James F. Gibbons ,  Martin P. Scott

IPC分类号： H01L21/205 ,  H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  Y10S148/026 ,  Y10S438/942

摘要： Several methods are disclosed for minimizing the number of defects or misfit locations in a SiGe layer selectively or non-selectively deposited on a partially oxide masked Si substrate.

公开(公告)号：US5177025A

公开(公告)日：1993-01-05

申请号：US825524

申请日：1992-01-24

申请人： John E. Turner ,  Theodore I. Kamins ,  Martin P. Scott ,  Yvonne H. Keller

发明人： John E. Turner ,  Theodore I. Kamins ,  Martin P. Scott ,  Yvonne H. Keller

IPC分类号： H01L29/73 ,  H01L21/22 ,  H01L21/285 ,  H01L21/331 ,  H01L21/74 ,  H01L29/161 ,  H01L29/737

CPC分类号： H01L29/66242 ,  H01L21/2205 ,  H01L21/28525 ,  H01L21/743 ,  H01L29/161 ,  Y10S148/041 ,  Y10S438/914 ,  Y10S438/936

摘要： A method of fabricating a semiconductor device to retard diffusion of a dopant from a center active region into adjacent regions. The center active region is epitaxially formed by selectively increasing and decreasing an introduction of diffusion-suppressing material, preferably germanium, into a semiconductor material, preferably silicon, so that a vertical profile of the content of the diffusion-suppressing material is such that outdiffusion of a dopant is minimized. One embodiment of the tailoring is to increase the concentration of the diffusion-suppressing material at both of the opposed sides of a base region of a bipolar transistor, thereby providing concentration peaks at the interfaces of the base region with collector and emitter regions. The concentration of germanium in a Si.sub.1-x Ge.sub.x layer is such that the value x is within the range 0.08 to 0.35 and optimally within the range 0.15 to 0.31. The dopant, preferably boron, also has a tailored concentration profile to minimize outdiffusion. A thinner, more highly doped active region is thereby achieved.