发明授权
US5204540A Resin sealed semiconductor device for use in testing and evaluation
method of stress due to resin seal
失效
树脂密封半导体器件用于由于树脂密封引起的应力测试和评估方法
- 专利标题: Resin sealed semiconductor device for use in testing and evaluation method of stress due to resin seal
- 专利标题(中): 树脂密封半导体器件用于由于树脂密封引起的应力测试和评估方法
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申请号: US673655申请日: 1991-03-21
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公开(公告)号: US5204540A公开(公告)日: 1993-04-20
- 发明人: Yuichi Nakashima , Shintaro Matsuda
- 申请人: Yuichi Nakashima , Shintaro Matsuda
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX2-78282 19900326
- 主分类号: H01L21/56
- IPC分类号: H01L21/56 ; H01L21/66 ; H01L23/28 ; H01L23/544
摘要:
A resin sealed semiconductor device for use in testing is disclosed, in which a first MOS field effect transistor is formed in a region within 100 .mu.m from an outer perimeter of a main surface of a silicon substrate, and a second MOS field effect transistor is formed in a region 100 .mu.m or more distant from an outer perimeter of the main surface, and the first and second MOS field effect transistors are encapsulated with resin. Dimensions and materials of the first MOS field effect transistor and the second MOS field effect transistor are identical. By comparing the electric characteristics of the first MOS field effect transistor and the electric characteristics of the second MOS field effect transistor, the effect produced on the MOS field effect transistors by the mechanical stresses due to the resin seal applied from a side direction of silicon substrate can be evaluated.
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