发明授权
- 专利标题： Fabrication of stabilized polysilicon resistors for SEU control
- 专利标题（中）： 用于SEU控制的稳定多晶硅电阻器的制造
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申请号： US807307申请日： 1991-12-13
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公开(公告)号： US5212108A公开(公告)日： 1993-05-18
- 发明人: Michael S. Liu , Gordon A. Shaw , Jerry Yue
- 申请人： Michael S. Liu , Gordon A. Shaw , Jerry Yue
- 申请人地址： MN Minneapolis
- 专利权人： Honeywell Inc.
- 当前专利权人： Honeywell Inc.
- 当前专利权人地址： MN Minneapolis
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/3215 ; H01L27/11
摘要：
A method for fabricating polysilicon resistors of intermediate high value for use as cross-coupling or =ingle event upset (SEU) resistors in memory cells. A thin polysilicon film is implanted with arsenic ions to produce a predetermined resistivity. The thin film is then implanted with fluorine ions to stabilize the grain boundaries and thereby the barrier height. Reducing the variation in barrier height from run to run of wafers allows the fabrication of reproducible SEU resistors.
公开/授权文献
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