发明授权
- 专利标题： Method of manufacturing semiconductor device having planar single crystal semiconductor surface
- 专利标题（中）： 制造具有平面单晶半导体表面的半导体器件的方法
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申请号： US640499申请日： 1991-01-14
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公开(公告)号： US5214001A公开(公告)日： 1993-05-25
- 发明人: Takashi Ipposhi , Kazuyuki Sugahara
- 申请人： Takashi Ipposhi , Kazuyuki Sugahara
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-010852 19900118
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/304 ; H01L21/762
摘要：
A manufacturing method of a semiconductor device having a planar single crystal semiconductor surface is disclosed. In the manufacturing method of a semiconductor device, an insulating film is formed on a semiconductor substrate, a noncrystal semiconductor film is formed on the insulating film, a stripe-like anti-reflection film is formed on the noncrystal semiconductor film, and laser beam is irradiated along the anti-reflection film. Because of the difference in temperature, a film with thicknesses different in a substrate region in which the anti-reflection film is formed and a region around it is formed. A film to be a machining allowance for polishing is formed on the single crystal semiconductor film, polishing is performed from the side of said film to be a machining allowance for polishing so that desired planar film thickness of the single crystal semiconductor film is implemented.
公开/授权文献
- US5695054A Carrying case for recorded media 公开/授权日：1997-12-09
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