发明授权
- 专利标题： Integrated HBT and VCSEL structure and method of fabrication
- 专利标题（中）： 集成HBT和VCSEL结构及其制造方法
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申请号： US829656申请日： 1992-02-03
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公开(公告)号： US5216686A公开(公告)日： 1993-06-01
- 发明人: Paige M. Holm , Donald E. Ackley
- 申请人： Paige M. Holm , Donald E. Ackley
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L27/15
- IPC分类号： H01L27/15 ; H01S5/026 ; H01S5/183
摘要：
A vertical cavity surface emitting laser (VCSEL), comprised of a first 1/4 wave stack, an active layer and a second 1/4 wave stack, is integrated with a heterojunction bipolar transistor (HBT). The HBT is partially or fully positioned within either the first or the second 1/4 wave stack of the VCSEL. This method improves the planarity of the device, thus allowing for high performance devices to be fabricated. A top or bottom emitting device may be fabricated with the second 1/4 wave stack comprised of dielectric layers or semiconductor epitaxial layers.
公开/授权文献
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