发明授权
US5225146A Injection of electrons with predominantly perpendicular energy into an
area of toroidal field ripple in a tokamak plasma to improve plasma
confinement
失效
将主要垂直能量的电子注入托卡马克等离子体中的环形场波纹区域以改善等离子体约束
- 专利标题: Injection of electrons with predominantly perpendicular energy into an area of toroidal field ripple in a tokamak plasma to improve plasma confinement
- 专利标题(中): 将主要垂直能量的电子注入托卡马克等离子体中的环形场波纹区域以改善等离子体约束
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申请号: US789519申请日: 1991-11-08
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公开(公告)号: US5225146A公开(公告)日: 1993-07-06
- 发明人: Masayuki Ono , Harold Furth
- 申请人: Masayuki Ono , Harold Furth
- 申请人地址: DC Washington
- 专利权人: The United States of America as represented by the United States Department of Energy
- 当前专利权人: The United States of America as represented by the United States Department of Energy
- 当前专利权人地址: DC Washington
- 主分类号: H05H1/12
- IPC分类号: H05H1/12
摘要:
An electron injection scheme for controlling transport in a tokamak plasma. Electrons with predominantly perpendicular energy are injected into a ripple field region created by a group of localized poloidal field bending magnets. The trapped electrons then grad-B drift vertically toward the plasma interior until they are detrapped, charging the plasma negative. Calculations indicate that the highly perpendicular velocity electrons can remain stable against kinetic instabilities in the regime of interest for tokamak experiments. The penetration distance can be controlled by controlling the "ripple mirror ratio", the energy of the injected electrons, and their v.sub..perp. /v.sub.51 ratio. In this scheme, the poloidal torque due to the injected radial current is taken by the magnets and not by the plasma. Injection is accomplished by the flat cathode containing an ECH cavity to pump electrons to high v.sub..perp..
公开/授权文献
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