发明授权
US5225717A BiCMOS input buffer circuit operable at high speed under less power
consumption
失效
BiCMOS输入缓冲电路可在较低功耗下高速运行
- 专利标题: BiCMOS input buffer circuit operable at high speed under less power consumption
- 专利标题(中): BiCMOS输入缓冲电路可在较低功耗下高速运行
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申请号: US802682申请日: 1991-12-05
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公开(公告)号: US5225717A公开(公告)日: 1993-07-06
- 发明人: Toru Shiomi , Jun Takahashi
- 申请人: Toru Shiomi , Jun Takahashi
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-104099 19910509
- 主分类号: G11C11/413
- IPC分类号: G11C11/413 ; G11C8/06 ; H03K19/00 ; H03K19/0175
摘要:
An input buffer circuit applicable as a BiCMOS RAM address buffer is disclosed. An improved level shift circuit 59 includes PMOS transistors 14 and 17 for bypassing emitter follower transistors 12 and 15, and NMOS transistors 13 and 16 for constituting a controllable current source Two differential amplifier circuits operating in response to an input signal having an ECL logic amplitude are provided, and emitter follower transistors 12 and 15 are driven by one of them, MOS transistors 13, 14, 16, and 17 are driven by the other. High operating speed is achieved under less current consumption, since emitter follower transistors 12 and 15, and MOS transistors 13, 14, 16, and 17 are driven, respectively.
公开/授权文献
- US5845845A Fluidic circuit with attached cover and method 公开/授权日:1998-12-08
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