发明授权
- 专利标题: Power semiconductor device with heat dissipating property
- 专利标题(中): 功率半导体器件具有散热特性
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申请号: US928665申请日: 1992-08-17
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公开(公告)号: US5229915A公开(公告)日: 1993-07-20
- 发明人: Chihiro Ishibashi , Hiroyuki Abe , Susumu Matsuoka
- 申请人: Chihiro Ishibashi , Hiroyuki Abe , Susumu Matsuoka
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 优先权: JPX2-27357 19900207
- 主分类号: H01L23/427
- IPC分类号: H01L23/427
摘要:
A power semiconductor device such as power thyristor including a semiconductor substrate which is clamped by first and second conductive members serving as the electrodes as well as heat sinks, and a plurality of heat pipes whose ends are inserted directly into the conductive members. A plurality of semiconductor substrates and temperature compensating plates are alternatively stacked on another and conductive members are provided on outermost temperature compensating plates to form an assembly. The assembly is hermetically sealed by an insulating package formed by an insulator having a corrugated outer surface such that outer surfaces of the conductive members are exposed out of the package. One or more heat pipes are inserted into the insulating package such that electrically insulating cooling medium filled in the heat pipes can be in direct contact with the semiconductor substrates. The heat pipes may be inserted into the conductive members or heat sinks provided in the assembly.
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