Power semiconductor device with heat dissipating property
    1.
    发明授权
    Power semiconductor device with heat dissipating property 失效
    功率半导体器件具有散热特性

    公开(公告)号:US5229915A

    公开(公告)日:1993-07-20

    申请号:US928665

    申请日:1992-08-17

    IPC分类号: H01L23/427

    摘要: A power semiconductor device such as power thyristor including a semiconductor substrate which is clamped by first and second conductive members serving as the electrodes as well as heat sinks, and a plurality of heat pipes whose ends are inserted directly into the conductive members. A plurality of semiconductor substrates and temperature compensating plates are alternatively stacked on another and conductive members are provided on outermost temperature compensating plates to form an assembly. The assembly is hermetically sealed by an insulating package formed by an insulator having a corrugated outer surface such that outer surfaces of the conductive members are exposed out of the package. One or more heat pipes are inserted into the insulating package such that electrically insulating cooling medium filled in the heat pipes can be in direct contact with the semiconductor substrates. The heat pipes may be inserted into the conductive members or heat sinks provided in the assembly.

    摘要翻译: 功率半导体装置,例如功率晶闸管,其包括被用作电极的第一和第二导电构件以及散热器夹持的半导体衬底,以及多个热管,其端部直接插入到导电构件中。 多个半导体衬底和温度补偿板交替堆叠在另一个上,并且导电构件设置在最外面的温度补偿板上以形成组件。 组件通过由具有波纹状外表面的绝缘体形成的绝缘封装气密地密封,使得导电构件的外表面暴露于封装外。 一个或多个热管被插入到绝缘包装中,使得填充在热管中的电绝缘的冷却介质可以与半导体衬底直接接触。 热管可以插入设置在组件中的导电构件或散热器中。