发明授权
- 专利标题： Method of forming metal regions
- 专利标题（中）： 形成金属区域的方法
-
申请号： US890047申请日： 1992-05-28
-
公开(公告)号： US5230970A公开(公告)日： 1993-07-27
- 发明人: Donald K. Atwood , Georgia J. Fisanick , Michal E. Gross , Abraham Katzir , Gary L. Wolk
- 申请人： Donald K. Atwood , Georgia J. Fisanick , Michal E. Gross , Abraham Katzir , Gary L. Wolk
- 申请人地址： NJ Murray Hill
- 专利权人： AT&T Bell Laboratories
- 当前专利权人： AT&T Bell Laboratories
- 当前专利权人地址： NJ Murray Hill
- 主分类号： G03F1/72
- IPC分类号： G03F1/72 ; H05K3/22
摘要：
A process of radiation-induced formation of a uniform metal or metal oxide region suitable for device application or for repairing transparent defects in pattern metal films of lithographic masks has been found. The process requires that the heat evolved during the radiation-induced reactions be carefully limited to produce the desired uniformity.
公开/授权文献
- US4716513A Base drive circuit in a transistor inverter 公开/授权日：1987-12-29
信息查询
