发明授权
- 专利标题： Guard ring structure with graded Be implantation
- 专利标题（中）： 保护环结构与等级植入
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申请号： US820630申请日： 1992-01-24
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公开(公告)号： US5233209A公开(公告)日： 1993-08-03
- 发明人: Paul M. Rodgers , Michael J. Robertson , Julie J. Rimington
- 申请人： Paul M. Rodgers , Michael J. Robertson , Julie J. Rimington
- 申请人地址： GB2 Suffolk
- 专利权人： BT&D Technologies Ltd.
- 当前专利权人： BT&D Technologies Ltd.
- 当前专利权人地址： GB2 Suffolk
- 优先权： GBX8913198 19890608
- 主分类号： H01L31/10
- IPC分类号： H01L31/10 ; H01L21/324 ; H01L31/0304 ; H01L31/107
摘要：
An avalanche photodiode having a beryllium guard ring. The beryllium is implanted at a dosage of at least 5.times.10.sup.14 per cm.sup.2 and subsequently annealed to provide a guard ring profile with a p+core and a superlinearly graded tail. The doping profile of the guard ring immediately adjacent the core is superlogarithmic.
公开/授权文献
- US5854541A Flicker light string suitable for unlimited series-connection 公开/授权日：1998-12-29
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