发明授权
- 专利标题： Lanthanum boride type single crystal and method for growing the same
- 专利标题（中）： 硼化镧型单晶及其生长方法
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申请号： US706197申请日： 1991-05-28
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公开(公告)号： US5238527A公开(公告)日： 1993-08-24
- 发明人: Shigeki Otani , Takaho Tanaka , Yoshio Ishizawa
- 申请人： Shigeki Otani , Takaho Tanaka , Yoshio Ishizawa
- 申请人地址： JPX Tsukuba
- 专利权人： National Institute for Research in Inorganic Materials
- 当前专利权人： National Institute for Research in Inorganic Materials
- 当前专利权人地址： JPX Tsukuba
- 优先权： JPX2-191671 19900719; JPX2-291354 19901029
- 主分类号： C30B13/00
- IPC分类号： C30B13/00
摘要：
The present invention relates to a lanthanum boride type single crystal having the chemical formula (La.sub.1-x M.sub.x)B.sub.6 (0.01.ltoreq.x.ltoreq.0.50) wherein M is at least one rare earth element selected from the group consisting of Ce, Pr, Nd, Sm and Gd, and further relates to a method for growing a lanthanum boride type single crystal by fusion method, which comprises using a lanthanum boride starting material containing from 1 to 50 mol % of at least one rare earth boride selected from the group consisting of CeB.sub.6, PrB.sub.6, NdB.sub.6, SmB.sub.6 and GdB.sub.6.
公开/授权文献
- US5975584A Carrier card with value chip 公开/授权日：1999-11-02
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