发明授权
- 专利标题: Method of manufacturing silicon nitride sintered bodies
- 专利标题(中): 制造氮化硅烧结体的方法
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申请号: US894640申请日: 1992-06-05
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公开(公告)号: US5238882A公开(公告)日: 1993-08-24
- 发明人: Tomonori Takahashi , Manabu Isomura , Keiji Matsuhiro
- 申请人: Tomonori Takahashi , Manabu Isomura , Keiji Matsuhiro
- 申请人地址: JPX Aichi
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JPX Aichi
- 优先权: JPX1-114965 19890510; JPX2-110633 19900427
- 主分类号: C04B35/584
- IPC分类号: C04B35/584 ; C04B35/593
摘要:
Silicon nitride sintered bodies are disclosed which contain silicon carbide therein and in which intergranular phases between silicon nitride particles are substantially crystallized. Further, a manufacturing method of the sintered bodies is disclosed, in which a silicon carbide powdery raw material is used as an additive when preparing raw powders and the intergranular phases are crystallized during a temperature descending stage following a firing. Silicone carbide effectivley promotes densification of the structure of the sintered body and crystallization of the intergranular phases, thereby making it possible to provide the sintered bodies having intergranular phases with little glass phases uncrystallized and excellent high-temperature strengths.
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