Invention Grant
- Patent Title: Method of manufacturing semiconductor structures
- Patent Title (中): 制造半导体结构的方法
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Application No.: US824869Application Date: 1992-01-22
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Publication No.: US5242857APublication Date: 1993-09-07
- Inventor: David M. Cooper , Andrew W. Nelson , Simon Cole , Ian F. Lealman , William J. Devlin
- Applicant: David M. Cooper , Andrew W. Nelson , Simon Cole , Ian F. Lealman , William J. Devlin
- Applicant Address: GB2 London
- Assignee: British Telecommunications public limited company
- Current Assignee: British Telecommunications public limited company
- Current Assignee Address: GB2 London
- Priority: GBX8622767 19860922
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L33/00 ; H01L33/24 ; H01S5/00 ; H01S5/22 ; H01S5/227 ; H01S5/323
Abstract:
In a semiconductor buried heterostructure laser having a mesa (2, 3, 4) and confinement layers (5, 6, 7) on a substrate (12), at least the lowermost of the confinement layers (5, 6, 7) is substantially planar up to the mesa. This is achieved by MOVPE growth of InP against lateral surfaces of the mesa (2, 3, 4) which are defined by distinct crystallographic planes of the material of the mesa. In particular (111) B InP planes are used. The laser is particularly for use in the field of optical communications.
Public/Granted literature
- US5152519A Pivoting separator stone for singulating feeder Public/Granted day:1992-10-06
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