公开(公告)号：US4935936A

公开(公告)日：1990-06-19

申请号：US313636

申请日：1989-02-22

Applicant: Andrew W. Nelson ,  Richard E. Hobbs ,  W. John Devlin ,  Charles G. Lenton

Inventor： Andrew W. Nelson ,  Richard E. Hobbs ,  W. John Devlin ,  Charles G. Lenton

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  H01L21/205 ,  H01L31/04 ,  H01L31/10 ,  H01L33/00 ,  H01S5/00 ,  H01S5/227

CPC classification number: H01L33/0062 ,  H01S5/227 ,  H01S5/2275

Abstract: A semiconductor structure and methods for making it, for use in opto-electronic devices, employs only MOVPE growth steps. The structure is based on a mesa having substantially non-reentrant sides. To make it, an initial semiconductor structure is produced which comprises a substrate with a mesa thereon, the mesa having a self-aligned, central stripe of metal organic vapour phase growth suppressing material on its uppermost surface. Burying layers are then grown by MOVPE at either side of the mesa, the stripe removed, and covering layers grown over the mesa and adjoining regions of the burying layers. To make an opto-electronic device, a silica window can be formed on the uppermost surface of the covering layers and contacts provided through the window and to the remote face of the substrate. Two methods of making the initial semiconductor structure are described. Devices such as optical detectors and waveguides can be made using methods according to the invention. Particularly importantly, semiconductor lasers which will operate in a single transverse mode can be made.

公开(公告)号：US4805184A

公开(公告)日：1989-02-14

申请号：US926720

申请日：1986-11-04

Applicant: Philip J. Fiddyment ,  Leslie D. Westbrook ,  Andrew W. Nelson

Inventor： Philip J. Fiddyment ,  Leslie D. Westbrook ,  Andrew W. Nelson

IPC: G02B6/122 ,  G02B6/12 ,  H01L21/205 ,  H01L21/306 ,  H01L33/00 ,  H01S5/00 ,  H01S5/12 ,  H01S5/22 ,  H01S3/19

CPC classification number: H01S5/22 ,  H01S5/12 ,  H01S5/1237

Abstract: A semiconductor device is disclosed that comprises a base semiconductor portion and, thereon, first and second elevated semiconductor portions separated by a channel. The uppermost surface of the first elevated semiconductor portion carries a metal electrical contact layer and the uppermost of the second a dielectric layer. The surfaces defining the channel are substantially free of metal and dielectric. The structure can be used in a ridge waveguide laser, the first elevated semiconductor portion constituting the ridge. Distributed feedback corrugations may be incorporated in such devices or in other ridge waveguide structures.

公开(公告)号：US4734387A

公开(公告)日：1988-03-29

申请号：US770081

申请日：1985-08-28

Applicant: Andrew W. Nelson ,  Leslie D. Westbrook

Inventor： Andrew W. Nelson ,  Leslie D. Westbrook

IPC: C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01S5/12 ,  H01S5/323 ,  B05D5/12

CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S5/12 ,  H01S5/1231 ,  H01S5/32391

Abstract: A gas mixture containing phosphine and R.sub.1 R.sub.2 R.sub.3 In X R.sub.4 R.sub.5 R.sub.6 or R.sub.1 R.sub.2 In X R.sub.4 R.sub.5 where the Rs are alkyl groups is passed over a semiconductor substrate comprising indium and phosphorus so as to deposit a semiconductor material comprising indium and phosphorus, and the exposure of the substrate to phosphine is controlled to avoid or reduce transport of the substrate material.Thus, for example, indium phosphide may be grown onto corrugations in gallium indium arsenide phosphide, the corrugations being non-deformed during this growth. Such a growth step may be used in the production of distributed feedback semiconductor lasers operating near 1.55 .mu.m.

Abstract translation: 含有膦和R1R2R3的气体混合物在X R4R5R6或R1R2In X R4R5（其中Rs为烷基）中通过包含铟和磷的半导体衬底，以沉积包含铟和磷的半导体材料，并将衬底暴露于磷化氢 被控制以避免或减少基底材料的输送。 因此，例如，磷化铟可以生长在磷化铟镓磷化物的波纹上，波纹在该生长期间不变形。 这样的生长步骤可以用于生产接近1.55μm的分布式反馈半导体激光器。

公开(公告)号：US4728628A

公开(公告)日：1988-03-01

申请号：US709196

申请日：1985-03-07

Applicant: Philip J. Fiddyment ,  Leslie D. Westbrook ,  Andrew W. Nelson

Inventor： Philip J. Fiddyment ,  Leslie D. Westbrook ,  Andrew W. Nelson

IPC: G02B6/122 ,  G02B6/12 ,  H01L21/205 ,  H01L21/306 ,  H01L33/00 ,  H01S5/00 ,  H01S5/12 ,  H01S5/22 ,  H01L21/308

CPC classification number: H01S5/22 ,  H01S5/12 ,  H01S5/1237

Abstract: A semiconductor device comprises a base semiconductor portion and, thereon, first and second elevated semiconductor portions separated by a channel. The uppermost surface of the first elevated semiconductor portion carries a metal electrical contact layer and the uppermost of the second a dielectric layer. The surfaces defining the channel are substantially free of metal and dielectric.The structure can be used in a ridge waveguide laser, the first elevated semiconductor portion constituting the ridge (7", 8").Distributed feedback corrugations may be incorporated in such devices (6), or in other ridge waveguide structures.

Abstract translation: 半导体器件包括基极半导体部分，并且在其上，由沟道分开的第一和第二升高的半导体部分。 第一升高半导体部分的最上表面承载金属电接触层和第二电介质层的最上面。 限定通道的表面基本上没有金属和电介质。 该结构可以用在脊波导激光器中，第一升高半导体部分构成脊（7 + 41,8“）。 分布式反馈波纹可以结合在这种装置（6）中，或者在其他脊形波导结构中。

公开(公告)号：US5242857A

公开(公告)日：1993-09-07

申请号：US824869

申请日：1992-01-22

Applicant: David M. Cooper ,  Andrew W. Nelson ,  Simon Cole ,  Ian F. Lealman ,  William J. Devlin

Inventor： David M. Cooper ,  Andrew W. Nelson ,  Simon Cole ,  Ian F. Lealman ,  William J. Devlin

IPC: H01L21/306 ,  H01L33/00 ,  H01L33/24 ,  H01S5/00 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323

CPC classification number: H01L33/24 ,  H01L21/30612 ,  H01L33/0062 ,  H01S5/227 ,  H01S5/2201 ,  H01S5/2275 ,  H01S5/32391 ,  Y10S438/978

Abstract: In a semiconductor buried heterostructure laser having a mesa (2, 3, 4) and confinement layers (5, 6, 7) on a substrate (12), at least the lowermost of the confinement layers (5, 6, 7) is substantially planar up to the mesa. This is achieved by MOVPE growth of InP against lateral surfaces of the mesa (2, 3, 4) which are defined by distinct crystallographic planes of the material of the mesa. In particular (111) B InP planes are used. The laser is particularly for use in the field of optical communications.

公开(公告)号：US4864581A

公开(公告)日：1989-09-05

申请号：US019591

申请日：1987-03-02

Applicant: Andrew W. Nelson ,  Richard E. Hobbs ,  W. John Deuling ,  Charles G. Lenton

Inventor： Andrew W. Nelson ,  Richard E. Hobbs ,  W. John Deuling ,  Charles G. Lenton

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  H01L21/205 ,  H01L31/04 ,  H01L31/10 ,  H01L33/00 ,  H01S5/00 ,  H01S5/227

CPC classification number: H01L33/0062 ,  H01S5/227 ,  H01S5/2275

Abstract: A semiconductor structure and methods for making it, for use in opto-electronic devices, employs only MOVPE growth steps. The structure is based on a mesa having substantially non-reentrant sides. An initial semiconductor structure is produced which includes a substrate with a mesa having a self-aligned, central stripe of metal organic vapor phase growth suppressing material on its uppermost surface. Burying layers are then grown by MOVPE at either side of the mesa, the stripe removed, and covering layers grown over the mesa and adjoining regions of the burying layers. To make an opto-electronic device, a silica window can be formed on the uppermost surface of the covering layers and contacts provided through the window and to the remote face of the substrate. Two methods of making the initial semiconductor structure are described. Devices such as optical detectors and waveguides can be made using methods according to the invention. Particularly importantly, semiconductor lasers which will operate in a single transverse mode can be made.

Abstract translation: PCT No.PCT / GB86 / 00387 Sec。 371日期1987年3月2日 102（e）1987年3月2日PCT PCT 1986年7月3日PCT公布。 公开号WO87 / 00348 日期：1987年1月15日。用于光电器件的半导体结构及其制造方法仅使用MOVPE生长步骤。 该结构基于具有基本上不可折入侧的台面。 制造初始半导体结构，其包括具有在其最上表面上具有自对准的中心条状金属有机气相生长抑制材料的台面的基板。 然后通过MOVPE在台面的任一侧上生长掩埋层，去除条纹，并在掩埋层的台面和邻接区域上生长覆盖层。 为了制造光电器件，可以在覆盖层的最上表面和通过窗口提供的触点和基板的远端面上形成二氧化硅窗口。 描述制作初始半导体结构的两种方法。 诸如光学检测器和波导的器件可以使用根据本发明的方法制造。 特别重要的是，可以制造将以单一横向模式操作的半导体激光器。